Characteristics of HgCdTe epilayer grown by LPE using horizontal slider
Source abstract
Abstract
The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
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References (2)
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1. Capper P (ed.) 1997Narrow gap II-VI compounds for opto-electronic and electromagnetic applications (UK: Chapman & Hall) p. 357
2. Radhakrishnan J K, Durai L, Bhatnagar M K, Sitharaman S and Gupta S C 2001Physics of semiconductor devices (eds) Vikram Kumar and P K Basu (New Delhi: Allied Publishers Ltd) p. 1182