journal article·1985-03

Characterization of deep levels in semi-insulating gallium arsenide

Y N Mohapatra, N Balasubramanyam, Vikram Kumar

Bulletin of Materials Science· Volume 7· Issue 1
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (7)

Show source-provided references
1. Deveaud B and Toulouse B 1980Semi-insulating III-V materials (conference), Nottingham (ed.) G J Rees (Kent: Shiva Publishers) pp. 24110.1007/978-1-4684-9193-7_30 ↗
2. Lang D V and Logan R A 1975.J. Electron. Mater. 4 105310.1007/BF02660189 ↗
3. Martin G M and Bois D 1978Electrochem. Soc. 78 32
4. Martin G M, Mitonneau A, Pons D, Mircea A and Woodard D W 1980J. Phys. C13 3855
5. Rose A 1963Concepts in photoconductivity and allied problems (New York: John Wiley)
6. Sah C T, Forbes L, Rosier L L and Tasch A F Jr 1970Solid State Electron. 13 75910.1016/0038-1101(70)90064-X ↗
7. Szawelska H R and Allen J W 1979J. Phys. C12 3359