Variation of crystallite size of Al1-x In x N for different values of x and band gap
Source abstract
Abstract
By using wide angle X-ray scattering (WAXS) technique, we have characterized the epitaxial Al1-xInxN films (thickness, 150 nm) with 0 <x < 1 grown by plasma source molecular beam epitaxy on sapphire (0001) at the low substrate temperature of 375°C, by computing the crystallite size in these samples. We observe that the crystallite size decreases with increase in the concentration of indium and that the band gap in these samples has a direct correlation with the crystallite size.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties
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References (23)
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