journal article·1988-05

Preparation and characterization of boric oxide for single crystal growth of GaP and GaAs

K Govinda Rajan, N V Chandra Shekar, M Sekar, D Champion Christdoss Selvakumar

Bulletin of Materials Science· Volume 10· Issue 3
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Abstract

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies

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References (13)

Show source-provided references
1. Bass S J and Oliver P E 1968Cryst. Growth 3 28610.1016/0022-0248(68)90155-3 ↗
2. Chang C E and Wilcox W R 1971Mater. Res. Bull. 6 129710.1016/0025-5408(71)90128-0 ↗
3. De Kock A J R 1980Handbook on semiconductors (eds) T S Moss and S P Keller (Amsterdam: North Holland) Vol 3 p. 247
4. Franz H 1965Glastech. Ber. 38 (2) 54
5. Hunter A T, Kimura H, Baukus J P, Winston H V and Marsh O J 1984Appl. Phys. Lett. 4 7410.1063/1.94557 ↗
6. Johnson Matthey Chemicals Limited 1987 Boric oxide Product Leaflet
7. Kirkpatrick C G, Chen R T, Holmes D E and Elliott K R 1985Gallium arsenide (eds) M J Howes and D V Morgan (New York: John Wiley) Chapt. 2 p. 39
8. Metz E P A, Miller R C and Mazelsky R 1962J. Appl. Phys. 33 201610.1063/1.1728885 ↗
9. Mullin J B, Straughan B W and Brickell W S 1965J. Phys. Chem. Solids 26 78210.1016/0022-3697(65)90034-X ↗
10. Nygren S F, Ringel C M and Verleur H W 1971J. Electrochem. Soc. Solid State Sci. 118 306
11. Oliver J R, Fairman R D, Chen R T and Yu P W 1981Electron. Lett. 17 83910.1049/el:19810584 ↗
12. Ostrogorsky A G, Yao K H and Witt A F 1987J. Cryst. Growth 84 46010.1016/0022-0248(87)90276-4 ↗
13. Weiner M E, Lassota D T and Schwartz B 1971J. Electrochem. Soc. Solid State Sci. 118 301