Band tailing in tellurium excess CdTe crystals grown from vapour phase
Source abstract
Abstract
Absorption spectra of hexagonally structured, tellurium excess p-type cadmium telluride (CdTe) grown from vapour phase having conductivity 2.529 × 104 (Ω cm)−1 was studied in the range 700–880 nm. The existence of phonon-assisted indirect transition was confirmed. The direct and indirect bandgaps and the involved phonon energy were identified. The analysis revealed a band tailing and the presence of a strong internal electric field responsible for the tunnelling of charge carriers.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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