Photoluminescence and heavy doping effects in InP
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. Baumann G G, Benz K W and Pilkhun M H 1976J. Electrochem. Soc. 123 123210.1149/1.2133041 ↗
2. Bendapudi S 1985LPE growth and characterisation of heavily-doped n-InP, Ph.D. thesis, Indian Institute of Technology, Kharagpur
3. Casey H C Jr and Stern F 1976J. Appl. Phys. 47 63110.1063/1.322626 ↗
4. De-Sheng J, Makita Y, Ploog K and Queisser 1982J. Appl. Phys. 53 99910.1063/1.330581 ↗
5. Dumke W P 1970Phys. Rev. B2 4126
6. Eagles D M 1960J. Phys. Chem. Solids 16 7610.1016/0022-3697(60)90075-5 ↗
7. Halperin B I and Lax M 1966Phys. Rev. 148 72210.1103/PhysRev.148.722 ↗
8. Hawrylo F Z 1980Appl. Phys. Lett. 37 103810.1063/1.91748 ↗
9. Nag B R 1980Electron transport in compound semiconductors (New York: Springer-Verlag)10.1007/978-3-642-81416-7 ↗
10. Oligo D, Cardona M and Miller H 1980Phys. Rev. B22 89410.1103/PhysRevB.22.894 ↗
11. Roeder O, Hermand U and Pilkhun M H 1970J. Phys. Chem. Solids 31 262510.1016/0022-3697(70)90257-X ↗
12. Vilkotskii V A, Domanevakii D S, Kakanov R D, Krasovaskii V V and Thurchev 1979Phys. Status Solidi B91 7110.1002/pssb.2220910106 ↗
13. Williams E W, Elder W, Astles M G, Webb M, Muller J B, Straughan B and Tufton P J 1973J. Electrochem. Soc. 120 175010.1149/1.2403358 ↗