Impact of compression on the crystal structure, electronic and magnetic properties for bulk MoS2
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: 2D Materials and Applications · Heusler alloys: electronic and magnetic properties · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. Gmelin L 1995 GMELIN Institute for Inorganic Chemistry of the Max-Planck-Society for the Advancement of Science, 8th edn. (Berlin: Springer-Verlag) vol B7
2. Cheiwchanchamnangij T and Lambrecht W R L 2012 Phys. Rev. B 85 20530210.1103/PhysRevB.85.205302 ↗
3. Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 13680510.1103/PhysRevLett.105.136805 ↗
4. Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C-Y et al 2010 Nano Lett. 10 127110.1021/nl903868w ↗
5. Bouarissa A, Gueddim A, Bouarissa N and Maghraoui-Meherzi H 2019 Optik 208 16408010.1016/j.ijleo.2019.164080 ↗
6. Gourmelon E, Lignier O, Hadouda H, Couturier G, Bernede J C, Tedd J et al 1997 J. Sol. Energy Mater. Sol. Cells 46 11510.1016/S0927-0248(96)00096-7 ↗
7. Ho W K, Yu J C, Lin J, Yu J G and Li P S 2004 Langmuir 20 586510.1021/la049838g ↗
8. Lee P A 1976 Optical and electrical properties (Dordrecht: Reidel) p 42310.1007/978-94-010-1478-6 ↗
9. Coehoorn R, Haas C and Degroot R A 1987 Phys. Rev. B 35 620310.1103/PhysRevB.35.6203 ↗
10. Lebegue S and Eriksson O 2009 Phys. Rev. B 79 11540910.1103/PhysRevB.79.115409 ↗
11. Li T S and Galli G L 2007 J. Phys. Chem. C 111 1619210.1021/jp075424v ↗
12. Kandemir A, Yapicioglu H, Kinaci A, Çaǧin T and Sevik C 2016 Nanotechnology 27 05570310.1088/0957-4484/27/5/055703 ↗
13. Zhang Y, Xu W, Liu G and Zhu J 2020 J. Phys.: Conf. Ser. 1676 012164
14. Akbari A, Naseri M and Jalilian J 2018 Chem. Phys. Lett. 691 18110.1016/j.cplett.2017.11.021 ↗
15. Ou H, Xu S, Xiao Z, Fu H and Luo Y 2019 IOP Conf. Series: Mater. Sci. Eng. 493 01207210.1088/1757-899X/493/1/012072 ↗
16. Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Atomically thin MoS2: a new direct-gap semiconductor arxiv.org
17. Holzapfel W B 1996 Rep. Prog. Phys. 59 2910.1088/0034-4885/59/1/002 ↗
18. Saib S, Bouarissa N, Rodríguez-Hernández P and Muñoz A 2008 Physica B 403 405910.1016/j.physb.2008.08.007 ↗
19. Lukačević I and Kirin D 2010 Croat. Chem. Acta 83 15
20. Manjón F J and Errandonea D 2009 Phys. Stat. Sol. B 246 910.1002/pssb.200844238 ↗
21. Boucenna M and Bouarissa N 2004 Mater. Chem. Phys. 84 37510.1016/j.matchemphys.2003.12.011 ↗
22. Mujica J A, Rubio A, Muñoz A and Needs R J 2003 Rev. Mod. Phys. 75 86310.1103/RevModPhys.75.863 ↗
23. Eremets M 1996 High pressure experimental methods (Oxford: Oxford University Press)10.1093/oso/9780198562696.001.0001 ↗
24. Hemley R J, Mao H K and Struzhkin V V 2005 J. Synchrotran Radiat. 12 13510.1107/S0909049504034417 ↗
25. Yin M T and Cohen M L 1980 Phys. Rev. Lett. 45 100410.1103/PhysRevLett.45.1004 ↗
26. Payne M C, Teter M P, Alan D C, Arias T A and Joannopoulos J D 1992 Rev. Mod. Phys. 64 104510.1103/RevModPhys.64.1045 ↗
27. Bouarissa N 2002 Phys. Stat. Sol. B 231 39110.1002/1521-3951(200206)231:2<391::AID-PSSB391>3.0.CO;2-J ↗
28. Bouarissa N 2002 Mater. Chem. Phys. 73 5110.1016/S0254-0584(01)00347-9 ↗
29. Wu Z and Cohen R E 2006 Phys. Rev. B 73 23511610.1103/PhysRevB.73.235116 ↗
30. Tran F and Blaha P 2009 Phys. Rev. Lett. 102 22640110.1103/PhysRevLett.102.226401 ↗
31. Blaha P, Schwarz K, Madsen G K H, Kvasnicka D, Luitz J 2014 WIEN2k an augmented plane wave plus local orbitals program for calculating crystal proprieties (Vienna University of Technology)
32. Zhu Z Y, Cheng Y C and Schwingen Schlögl V 2011 Phys. Rev. B 84 15340210.1103/PhysRevB.84.153402 ↗
33. Molina-Sánchez A, Sangalli D, Hummer K, Marini A and Wirtz L 2013 Phys. Rev. B 88 04541210.1103/PhysRevB.88.045412 ↗
34. Abdul Rahman I and Purqon A 2017 J. Phys.: Conf. Series 877 012026
35. Wakabayashi N, Smith H G and Nicklow R M 1975 Phys. Rev. B 12 65910.1103/PhysRevB.12.659 ↗
36. Saib S and Bouarissa N 2007 Phys. Stat. Sol. B 244 106310.1002/pssb.200642441 ↗
37. Zerroug S, Ali Sahraoui F and Bouarissa N 2007 Eur. Phys. J. B 57 910.1140/epjb/e2007-00157-8 ↗
38. Algarni H, Gueddim A, Bouarissa N, Khan M A and Ziani H 2019 Res. Phys. 15 102694
39. Cohen M L and Chelikowsky J R 1989 Electronic structure and optical properties of semiconductors (Berlin: Springer-Verlag)10.1007/978-3-642-61338-8 ↗
40. Bouarissa N 1998 Phys. Lett. A 245 28510.1016/S0375-9601(98)00403-4 ↗
41. Martin R M 2004 Electronic structure: basic theory and practical methods (Cambridge University Press)10.1017/CBO9780511805769 ↗
42. Bouarissa N 2006 J. Phys. Chem. Solids 67 144010.1016/j.jpcs.2006.01.111 ↗
43. Adachi S 2005 Properties of group-IV, III-V, and II-VI semiconductors (Chichester: Wiley)10.1002/0470090340 ↗
44. Adachi S 2009 Properties of semiconductor alloys: group-IV, III-V and II-VI semiconductors (Chichester: John Wiley & Sons Ltd.)10.1002/9780470744383 ↗
45. Bouarissa N 2001 Mater. Sci. Eng. B 86 5310.1016/S0921-5107(01)00658-4 ↗
46. El Hassasna A, Bechiri A and Bouarissa N 2019 Mater. Res. Exp. 6 08591510.1088/2053-1591/ab2697 ↗
47. Saib S, Bouarissa N, Rodríguez-Hernández P and Muñoz A 2010 Eur. Phys. J. B 73 18510.1140/epjb/e2009-00426-6 ↗
48. Moulai N, Bouarissa N, Lagoun B and Kendil D 2019 J. Supercond. Nov. Magn. 32 107710.1007/s10948-018-4802-9 ↗
49. Harrache Y and Bouarissa N 2019 Solid. Stat. Commun. 295 2610.1016/j.ssc.2019.04.002 ↗
50. Shinjo T 2009 (ed) Nanomagnetism and spintronics (USA: Elsevier Science) eBook ISBN: 9780080932163 https://doi.org/10.1016/C2009-0-18006-610.1016/C2009-0-18006-6 ↗
51. Samy O, Zeng S, Birowosuto M D and Moutaouakil A E 2021 Crystals 11 35510.3390/cryst11040355 ↗
52. Teshome T and Dutta A 2018 J. Phys. Chem. C 122 1504710.1021/acs.jpcc.8b05293 ↗
53. Teshome T and Dutta A 2018 J. Phys. Chem. C 122 2512710.1021/acs.jpcc.8b08485 ↗
54. Teshome T and Dutta A 2019 ACS Omega 4 870110.1021/acsomega.9b00613 ↗