journal article·2020-12

Optical properties and defects of ZnO nanorods that are modified by treatment with $$\hbox {H}_2\hbox {O}_2$$ and used as conductive filaments for poly(methyl methacrylate)-based resistive switching applications

Nian-Hao Yan, Yow-Jon Lin, Ting-Hong Su, Hsing-Cheng Chang

Bulletin of Materials Science· Volume 43· Issue 1
Publisher page

Abstract

The optical and structural properties of ZnO nanorods that are modified using (hbox {H}_2 ext {O}_2) and used as the conductive filament (CF) for poly(methyl methacrylate) (PMMA)-based resistive switching (Rs) applications are studied. ZnO nanorods are used as the CF for a PMMA-based Rs device, to determine their specific properties and to determine the effect of oxygen vacancies on the Rs performance in ZnO. The Rs performance for PMMA-based devices is affected by treatment with (hbox {H}_2 ext {O}_2). An appropriate (hbox {H}_2 ext {O}_2) treatment time produces a significant change in the Rs performance for a PMMA/ZnO nanorod array device, because there is a change in the number of oxygen vacancies in ZnO that is treated with (hbox {H}_2 ext {O}_2) solution at (60 circ hbox {C}) for 60 s. This study demonstrates the operation of a PMMA-based Rs device that features a ZnO CF that undergoes treatment with (hbox {H}_2 ext {O}_2).
Source: expertdata · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · ZnO doping and properties · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (42)

Show source-provided references
1. Yu S 2016 Resistive random access memory (RRAM) (Williston: Morgan & Claypool Publishers)10.2200/S00681ED1V01Y201510EET006 ↗
2. Chen M C, Chang T C, Tsai C T, Huang S Y, Chen S C, Hu C W et al 2010 Appl. Phys. Lett.96 26211010.1063/1.3456379 ↗
3. Bae Y C, Lee A R, Kwak J S, Im H and Hong J P 2011 Curr. Appl. Phys.11 e6610.1016/j.cap.2010.11.125 ↗
4. Zhang Y, Deng N, Wu H, Yu Z, Zhang J and Qian H 2014 Appl. Phys. Lett.105 06350810.1063/1.4893325 ↗
5. Choi S, Yang Y and Lu W 2014 Nanoscale6 40010.1039/C3NR05016E ↗
6. Yang M K, Park J W, Ko T K and Lee J K 2009 Appl. Phys. Lett.95 04210510.1063/1.3191674 ↗
7. Su T H and Lin Y J 2014 Appl. Phys. Lett.104 15350410.1063/1.4871693 ↗
8. Mannequin C, Delamoreanu A, Latu-Romain L, Jousseaume V, Grampeix H, David S et al 2016 Microelectron. Eng.161 8210.1016/j.mee.2016.04.009 ↗
9. Huang R, Sun K, Kiang K S, Morgan K A and de Groot C H 2016 Microelectron. Eng.161 710.1016/j.mee.2016.03.038 ↗
10. Buzio R, Gerbi A, Gadaleta A, Anghinolfi L, Bisio F, Bellingeri E et al 2012 Appl. Phys. Lett.101 24350510.1063/1.4771603 ↗
11. Biju K P, Liu X, Kim S, Siddik M, Shin J, Lee J et al 2011 Curr. Appl. Phys.11 e6210.1016/j.cap.2010.11.124 ↗
12. Lin Y J and Ke Z Y 2017 J. Mater. Sci.: Mater. Electron.28 14377
13. Sun B, Zhang X, Zhou G, Yu T, Mao S, Zhu S et al 2018 J. Colloid Interface Sci.520 1910.1016/j.jcis.2018.03.001 ↗
14. Zheng P, Sun B, Chen Y, Elshekh H, Yu T, Mao S et al 2019 Appl. Mater. Today14 2110.1016/j.apmt.2018.11.007 ↗
15. Zhou G, Sun B, Zhou A, Wu B and Huang H 2017 Curr. Appl. Phys.17 23510.1016/j.cap.2016.09.018 ↗
16. Lin W P, Liu S J, Gong T, Zhao Q and Huang W 2014 Adv. Mater.26 57010.1002/adma.201302637 ↗
17. Song S, Cho B, Kim T W, Ji Y, Jo M, Wang G et al 2010 Adv. Mater.22 504810.1002/adma.201002575 ↗
18. Wu S, Tsuruoka T, Terabe K, Hasegawa T, Hill J P, Ariga K et al 2011 Adv. Funct. Mater.21 9310.1002/adfm.201001520 ↗
19. Baek I J and Cho W J 2018 Solid State Electron.140 12910.1016/j.sse.2017.10.030 ↗
20. Liu Y, Li F, Chen Z, Guo T, Wu C and Kim T W 2016 Vacuum130 10910.1016/j.vacuum.2016.05.010 ↗
21. Huang C C and Lin Y J 2018 Chem. Phys. Lett.692 38810.1016/j.cplett.2017.12.072 ↗
22. Yang Y J, Rehman M M, Siddiqui G U, Na K H and Choi K H 2017 Curr. Appl. Phys.17 173310.1016/j.cap.2017.10.001 ↗
23. Lin Y, Xu H Y, Wang Z Q, Cong T, Liu W Z, Ma H L et al 2017 Appl. Phys. Lett.110 19350310.1063/1.4983382 ↗
24. Aziz T N T A, Rosli A B, Yusoff M M, Herman S H and Zulkifli Z 2019 Mater. Sci. Semicond. Process.89 6810.1016/j.mssp.2018.08.029 ↗
25. Park K H, Jung J H, Li F, Son D I and Kim T W 2008 Appl. Phys. Lett.93 13210410.1063/1.2992203 ↗
26. Lin Y J 2017 Sens. Actuator A260 6210.1016/j.sna.2017.04.003 ↗
27. Hames Y, Alpaslan Z, San A S E and Yerli Y 2010 SolarEnergy84 42610.1016/j.solener.2009.12.013 ↗
28. Loh L, Briscoe J and Dunn S 2013 J. Phys.: Conf. Ser.476 012008
29. Qi J, Olmedo M, Ren J, Zhan N, Zheng J G and Liu J 2012 ACS Nano62 105110.1021/nn204809a ↗
30. Yang S H, Lin Y J, Chang H C and Chen Y H 2013 Thin Solid Films545 47610.1016/j.tsf.2013.08.063 ↗
31. Lin Y J, Tsai C L, Lu Y M and Liu C J 2006 J. Appl. Phys.99 09350110.1063/1.2193649 ↗
32. Monteiro T, Neves A J, Carmo M C, Soares M J, Peres M, Wang J et al 2005 J. Appl. Phys.98 01350210.1063/1.1946200 ↗
33. Özgür Ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S et al 2005 J. Appl. Phys.98 04130110.1063/1.1992666 ↗
34. Goh G K L, Han X Q, Liew C P K and Tay C S S 2005 J. Electrochem. Soc.152 C53210.1149/1.1943590 ↗
35. Game O, Singh U, Gupta A A, Suryawanshi A, Banpurkar A and Ogale S 2012 J. Mater. Chem.22 1730210.1039/c2jm32812g ↗
36. He G R, Lin Y J, Chang H C and Chen Y H 2012 Thin Solid Films525 15410.1016/j.tsf.2012.10.056 ↗
37. He G R and Lin Y J 2012 Mater. Chem. Phys.136 17910.1016/j.matchemphys.2012.06.049 ↗
38. Tsai C H, Hung C I, Yang C F and Houng M P 2010 Appl. Surf. Sci.257 61010.1016/j.apsusc.2010.07.043 ↗
39. Lupan O and Pauporté T 2010 J. Cryst. Growth312 245410.1016/j.jcrysgro.2010.05.022 ↗
40. Remashan K, Hwang D K, Park S D, Bae J W, Yeom G Y, Park S J et al 2008 Electrochem. Solid-State Lett.11 H5510.1149/1.2822885 ↗
41. Nam S H and Boo J H 2016 Catal. Today265 8410.1016/j.cattod.2015.11.003 ↗
42. Simanjuntak F M, Panda D, Wei K H and Tseng T Y 2016 Nanoscale Res. Lett.11 36810.1186/s11671-016-1570-y ↗