Step-edge guided growth of nanowires on three-fold symmetric vicinal Si(111) surfaces

Clean vicinal surfaces exhibit a stepped pattern due to the presence of narrow terraces formed on a clean surface. Therefore, this provides a platform for the aligned growth of nanowires. Using this type of surface as a template, we have grown nanowires of iron di-silicide, which are preferentially directed along the length of the terraces and are following the step-edges. These nanowires do not follow underlying three-fold symmetry of the substrate. We have thus shown two-fold symmetric growth on a three-fold symmetric surface, where diffusion barrier energy plays an important role in determining the shape of the islands. The orientations of nanowires are governed primarily by the presence of step-edges. However, the crystallographic symmetry properties of the underlying substrate have also played its role in controlling the nanowire orientation. The system was grown by molecular beam epitaxy and analysed by scanning tunneling microscopy.