journal article·1998-08

Lattice mismatch and surface morphology studies of In x Ga1−x As epilayers grown on GaAs substrates

R Pal, M Singh, R Murlidharan, S K Agarwal, D Pal, D N Bose

Bulletin of Materials Science· Volume 21· Issue 4
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Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Adhesion, Friction, and Surface Interactions

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References (16)

Show source-provided references
1. Chang K H, Bhattacharya P K and Gibala R 1989J Appl. Phys. 66 299310.1063/1.344183 ↗
2. Chang K H, Gibala R, Srolovitz D J, Bhattacharya P K and Mansfield J F 1990J. Appl. Phys. 67 409310.1063/1.344968 ↗
3. Fitzgerald E A, Ast D G, Ashizawa Y, Akbar S and Eastman L F 1988aJ. Appl. Phys. 64 247310.1063/1.341656 ↗
4. Fitzgerald E A, Ast D G, Kirchner P D, Pettit G D and Woodall J M 1988bJ. Appl. Phys. 63 69310.1063/1.340059 ↗
5. Frank F C and Van der Merwe J H 1949Proc. Roy. Soc. London A198 21610.1098/rspa.1949.0096 ↗
6. Halliwell M A G, Lyons M H and Hill M J 1984J. Cryst. Growth 68 52310.1016/0022-0248(84)90459-7 ↗
7. Kishino S, Ogirima S M and Kurata K 1972J. Electrochem. Soc. 119 61710.1149/1.2404273 ↗
8. Krishnamoorty V, Ribas P and Park R M 1991Appl. Phys. Lett. 58 200010.1063/1.105045 ↗
9. Maree P M J, Barbour J C, Van der Veen J F, Kavanagh K L, Bulle-Lieuwama W T and Viegers M P A 1987J. Appl. Phys. 62 441310.1063/1.339078 ↗
10. Matthews J W and Blakeslee A E 1974J. Cryst. Growth 27 118
11. Murlidharan R and Ploog K 1989Appl. Phys. A49 52710.1007/BF00617020 ↗
12. Nagai N 1974J. Appl. Phys. 45 378910.1063/1.1663861 ↗
13. Nishioka T, Itoh Y, Yamamoto A and Yamaguchi M 1987Appl. Phys. Lett. 51 192810.1063/1.98303 ↗
14. Noad J P and SpringThorpe A J 1980J. Electronic Mater. 9 60110.1007/BF02652939 ↗
15. Olsen G H 1975J. Cryst. Growth 31 22310.1016/0022-0248(75)90135-9 ↗
16. Stringfellow G B 1993Lattice parameters and crystal structure of InGaAs (ed.) P BhattacharyaEMIS data series No. 8 (INSPEC) p. 3