journal article·2013-04

Accurate quasi static capacitance for abrupt homojunction under forward and reverse polarization

D BOUKREDIMI, H ALLOUCHE

Bulletin of Materials Science· Volume 36· Issue 2
Publisher page

Abstract

In this work, we present a new approach to derive the capacitance–voltage characteristic for an abrupt homojunction with uniform doping (N A in p-region and N D in n-region) under forward and reverse polarization. Under thermal equilibrium conditions, we show that it is possible to obtain analytically the exact capacitance–voltage characteristic without any simulation for the symmetric case (N A = N D ). We also propose a model of the total capacitance under forward and reverse polarization for the asymmetric case ( $N\bf A \ne N\bf D$ ).
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Research context

OpenAlex topics: Surface and Thin Film Phenomena · Semiconductor materials and devices · Copper Interconnects and Reliability

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