Band structure and thermoelectric properties of $$\hbox {Cu}2\hbox {O}$$ from GGA and GGA+U approaches
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OpenAlex topics: Copper-based nanomaterials and applications · ZnO doping and properties · Advanced Thermoelectric Materials and Devices
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References (26)
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1. Meyer B K et al 2012 Phys. Status Solidi B 249 148710.1002/pssb.201248128 ↗
2. Heinemann M, Eifert B and Heiliger C 2013 Phys. Rev. B 87 11511110.1103/PhysRevB.87.115111 ↗
3. Hartung D, Gather F, Hering P, Kandzia C, Reppin D, Polity A et al 2015 Appl. Phys. Lett. 106 25390110.1063/1.4923031 ↗
4. Wong T S K, Zhuk S, Masudy-Panah S and Dalapati G K 2016 Materials 9 27110.3390/ma9040271 ↗
5. Rai B P 1988 Sol. Cells 25 26510.1016/0379-6787(88)90065-8 ↗
6. Chen L C 2013 Mater. Sci. Semicond. Process. 16 117210.1016/j.mssp.2012.12.028 ↗
7. Nandy S, Banerjee A N, Fortunato E and Martins R 2013 Rev. Adv. Sci. Eng. 2 27310.1166/rase.2013.1045 ↗
8. Zemzemi M, Elghoul N, Khirouni K and Alaya S 2014 JETP 118 23510.1134/S1063776114020228 ↗
9. Young A P and Schwartz C M 1969 J. Phys. Chem. Solids 30 24910.1016/0022-3697(69)90306-0 ↗
10. Chen X, Parker D, Du M H and Singh D J 2013 New J. Phys. 15 04302910.1088/1367-2630/15/4/043029 ↗
11. Raebiger H, Lany S and Zunger A 2007 Phys. Rev. B 76 04520910.1103/PhysRevB.76.045209 ↗
12. Linnera J and Karttunen A J 2017 Phys. Rev. B 96 01430410.1103/PhysRevB.96.014304 ↗
13. Liechtenstein A I, Anisimov V I and Zaanen J 1995 Phys. Rev. B 52 R546710.1103/PhysRevB.52.R5467 ↗
14. Dudarev S L, Botton G A, Savrasov S Y, Humphreys C J and Sutton A P 1998 Phys. Rev. B 57 150510.1103/PhysRevB.57.1505 ↗
15. http://elk.sourceforge.net/
16. Madsen G K H and Singh D J 2006 Comput. Phys. Commun. 175 6710.1016/j.cpc.2006.03.007 ↗
17. Seeger K 2004 Semiconductor physics 9th edn (Berlin: Springer)10.1007/978-3-662-09855-4 ↗
18. Xing G, Sun J, Li Y, Fan X, Zheng W and Singh D J 2017 Phys. Rev. Mater. 1 06540510.1103/PhysRevMaterials.1.065405 ↗
19. Maurya V and Joshi K B 2019 J. Alloys Compd. 779 97110.1016/j.jallcom.2018.11.141 ↗
20. Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 386510.1103/PhysRevLett.77.3865 ↗
21. Isseroff L Y and Carter E A 2012 Phys. Rev. B 85 23514210.1103/PhysRevB.85.235142 ↗
22. Xing G, Sun J, Ong K P, Fan X, Zheng W and Singh D J 2016 APL Mater. 4 05320110.1063/1.4941711 ↗
23. Sun J and Singh D J 2017 J. Mater. Chem. A 5 849910.1039/C6TA11234J ↗
24. Pei Y, Wang H and Snyder G J 2012 Adv. Mater. 24 612510.1002/adma.201202919 ↗
25. Ghijsen J, Tjeng L H, van Elp J, Eskes H, Westerink J, Sawatzky G A et al 1988 Phys. Rev. B 38 1132210.1103/PhysRevB.38.11322 ↗
26. Shen Z X, List R S, Dessau D S, Parmigiani F, Arko A J, Bartlett R et al 1990 Phys. Rev. B 42 808110.1103/PhysRevB.42.8081 ↗