journal article·2023-03-04

Effects of bath temperature on the properties of chemical bath-deposited FeSxOy films

Parvin Asogan, Adrian Afzal Ariff, Aizuddin Supee, Rafiziana Md Kasmani, Norazana Ibrahim, Mohd Akhmal Muhammad Sidek, Mohd Zamri Mohd Yusop, Abd Khamim Ismail

Bulletin of Materials Science· Volume 46· Issue 1
Publisher page

Abstract

Iron-sulphide-oxide (FeSxOy) thin films were prepared on fluorine-tin-oxide (FTO)-coated glass substrate for 3-h-deposition times via chemical bath deposition (CBD) from an aqueous solution, containing 100 mM sodium thiosulphate (Na2S2O3), 30 mM iron (II) sulphate heptahydrate (FeSO4·7H2O) and 50 mM L(+)-tartaric acid (C4H6O6) as the complexing agent. The effects of bath temperature (45–90°C) on FeSxOy film properties including optical, structural, impurities, composition and surface morphology were studied. Characterization equipment, such as scanning electron microscopy equipped with energy dispersive X-ray spectroscopy: thickness estimated from the cross-section image, surface morphology and composition, X-ray diffraction: crystallinity/amorphous, Raman spectra: impurities, UV–vis spectroscopy: transmittance and bandgap estimation, and Hot Probe method: photoresponse, has been used in analysing the properties of the deposited films. The optimum bath temperature of 75°C has resulted in better film quality in terms of compactness, uniformity and crystallinity (larger crystallite size). All the deposited films exhibited n-type photoresponse with a large bandgap of 3.36–3.57 eV, which could be associated with crystallinity (crystallite size), phase purity and high oxygen content (>50%).
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Iron oxide chemistry and applications · Metal Extraction and Bioleaching · Minerals Flotation and Separation Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (53)

Show source-provided references
1. Wadia C, Alivisatos A P and Kammen D M 2009 Environ. Sci. Technol. 43 207210.1021/es8019534 ↗
2. Henríquez R, Vasquez C, Briones N, Munoz E, Leyton P and Dalchiele E A 2016 Int. J. Electrochem. Sci. 11 496610.20964/2016.06.17 ↗
3. Qin H, Jia J, Lin L, Ni H, Wang M and Meng L 2018 Mater. Sci. Eng. B 236 10410.1016/j.mseb.2018.11.003 ↗
4. Walter J, Zhang X, Voigt B, Hool R, Manno M, Mork F, Aydil E S and Leighton C 2017 Phys. Rev. Mater. 1 06540310.1103/PhysRevMaterials.1.065403 ↗
5. Srivastava R, Saxena A and Ingole S 2017 Chalcogenide Lett. 14 227
6. Supee A and Ichimura M 2016 Jpn. J. Appl. Phys. 55 08120210.7567/JJAP.55.081202 ↗
7. Bhandari K P, Roland P J, Koirala P, Khanal R R, Paudel N R, Collins R et al 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) p 110.1109/PVSC.2015.7356104 ↗
8. Adusumilli S P, Dederick J M, Bae I-T, Garner S M, Sharma A, Westgate C R et al 2016 Thin Solid Films 615 27110.1016/j.tsf.2016.07.016 ↗
9. Aluri V, Reddy K T R and Reddy Y M 2015 Nanotechnol. Rev. 4 46910.1515/ntrev-2014-0043 ↗
10. Vedavathi A, Munikrishna Y and Ramakrishna K 2015 J. Eng. 5 65
11. Kassim A, SoonMin H, YeanYee L, WeeTee T and Nagalingam S 2012 Can. J. Appl. Sci. 6 1863
12. Orletskii I G, Mar’yanchuk P D, Maistruk E V, Solovan M N and Brus V V 2016 Solid State Phys. 58 3710.1134/S1063783416010224 ↗
13. Kment S, Kmentova H, Sarkar A, Soukup R J, Ianno N J, Sekora D et al 2014 J. Alloys Compd. 607 16910.1016/j.jallcom.2014.04.060 ↗
14. Prabukanthan P, Thamaraiselvi S and Harichandran G 2017 J. Electrochem. Soc. 164 D58110.1149/2.0991709jes ↗
15. Kawai S, Yamazaki R, Sobue S, Okuno E and Ichimura M 2014 APL Mater. 2 03211010.1063/1.4869035 ↗
16. Nasr T B, Kamoun N, Kanzari M and Bennaceur R 2006 Thin Solid Films 500 410.1016/j.tsf.2005.11.030 ↗
17. Kassim A, WeeTee T, Abdullah D K, Sharif A M, SoonMin H, Yong G S et al 2010 Indones. J. Chem. 10 810.22146/ijc.21473 ↗
18. Manikandan K, Mani P, Dilip C S, Valli S, Inbaraj P F H and Prince J J 2014 Appl. Surf. Sci. 288 7610.1016/j.apsusc.2013.09.118 ↗
19. Barote M A, Yadav A A and Masumdar E U 2011 Chalcogenide Lett. 8 129
20. Reddy Y M and Vedavathi A 2012 J. Appl. Sci. 12 177210.3923/jas.2012.1772.1774 ↗
21. Temel S 2018 Can. J. Phys. 96 82610.1139/cjp-2017-0730 ↗
22. Ennaoui A, Fiechter S, Goslowsky H and Tributsch H 1985 J. Electrochem. Soc. 132 157910.1149/1.2114168 ↗
23. Luo L, Luan W, Yuan B, Zhang C and Jin L 2015 Energy Procedia 75 218110.1016/j.egypro.2015.07.368 ↗
24. Wang D Y, Jiang Y T, Lin C C, Li S S, Wang Y T, Chen C C and Chen C W 2012 Adv. Mater. 24 341510.1002/adma.201200753 ↗
25. Kawai S, Kajima T and Ichimura M 2016 Mater. Res. Express 3 02590110.1088/2053-1591/3/2/025901 ↗
26. Supee A and Ichimura M 2017 Appl. Phys. A 123 110.1007/s00339-017-1340-4 ↗
27. Hidzi A H, Supee A, Haladin N B, Mohd Yusop M Z and Wan Shamsuri W N 2019 Malays. J. Chem. 21 110
28. Hidzir A H, Haladin N B, Mohd Yusop M Z, Ibrahim N and Supee A 2021 Mater. Today: Proc. 39 947
29. Patterson A L 1939 Phys. Rev. 56 97810.1103/PhysRev.56.978 ↗
30. Wu P, Zhou C, Li Y, Zhang M, Tao P, Liu Q and Cui W 2021 Appl. Surf. Sci. 540 14836210.1016/j.apsusc.2020.148362 ↗
31. Nie X, Luo S, Yang M, Zeng P, Qin Z, Yu W and Wan Q 2019 Minerals 9 110.3390/min9050273 ↗
32. Saragi T, Permana B, Saputri M, Depi B L, Butarbutar S W, Safriani L et al 2018 J. Phys. Conf. Ser. 1080 01201910.1088/1742-6596/1080/1/012019 ↗
33. Morrish R, Silverstein R and Wolden C A 2012 J. Am. Chem. Soc. 134 1785410.1021/ja307412e ↗
34. Bi Y, Yuan Y, Exstrom C L, Darveau S A and Huang J 2011 Nano Lett. 11 495310.1021/nl202902z ↗
35. Umehara M, Takeda Y, Azuma H and Motohiro T 2012 Jpn. J. Appl. Phys. 51 02BP1010.1143/JJAP.51.02BP10 ↗
36. Thibeau R J, Brown C W and Heidersbach R H 1978 Appl. Spectrosc. 32 53210.1366/000370278774330739 ↗
37. Nauer G, Strecha P, Brinda-Konopik N and Liptay G 1985 J. Therm. Anal. 30 81310.1007/BF01913309 ↗
38. Nakamura S and Yamamoto A 2001 Sol. Energy Mater Sol. Cells 65 7910.1016/S0927-0248(00)00080-5 ↗
39. Ferrer I J, Nevskaia D M, De las Heras C and Sanchez C 1990 Solid State Commun. 74 91310.1016/0038-1098(90)90455-K ↗
40. Zhang H, Bayne M, Fernando S, Legg B, Zhu M, Penn R L et al 2011 J. Phys. Chem. C 115 1770410.1021/jp205192a ↗
41. Akhtar M S, Alenad A and Malik M A 2015 Mater. Sci. Semicond. Process. 32 110.1016/j.mssp.2014.12.073 ↗
42. Ramírez-Bon R, Espinoza-Beltrán F J, Arizpe-Chávez H, Zelaya-Angel O and Sánchez-Sinencio F 1995 J. Appl. Phys. 77 546110.1063/1.359244 ↗
43. Innocenti M, Becucci L, Bencistà I, Carretti E, Cinotti S, Dei L, Di Benedetto F et al 2013 J. Electroanal. Chem. 710 1710.1016/j.jelechem.2013.01.024 ↗
44. Ghazali A, Zainal Z, Hussein M Z and Kassim A 1998 Sol. Energy Mater. Sol. Cells 55 23710.1016/S0927-0248(98)00106-8 ↗
45. Patel S P, Chawla A K, Chandra R, Prakash J, Kulriya P K, Pivin J C et al 2010 Solid State Commun. 150 115810.1016/j.ssc.2010.03.017 ↗
46. Das K, Panda S K, Gorai S, Mishra P and Chaudhuri S 2008 Mater. Res. Bull. 43 274210.1016/j.materresbull.2007.10.013 ↗
47. Smaili F, Kanzari M and Rezig B 2008 Mater. Sci. Eng. C 28 95410.1016/j.msec.2007.10.033 ↗
48. Devika M, Reddy N K, Ramesh K, Gunasekhar K R, Gopal E S R and Reddy K T R 2006 J. Electrochem. Soc. 153 G72710.1149/1.2204870 ↗
49. Rupp J L, Scherrer B, Harvey A S and Gauckler L J 2009 Adv. Funct. Mater. 19 279010.1002/adfm.200900255 ↗
50. Simons P, Torres K P and Rupp J L 2022 J. Mater. Chem. A 10 889810.1039/D1TA09115H ↗
51. Lu Z, Zhou H, Ye C, Chen S, Ning J, Halim M A et al 2021 Nanomaterials 11 284410.3390/nano11112844 ↗
52. La Notte L, Salamandra L, Zampetti A, Brunetti F, Brown T, Di Carlo A et al 2012 Int. J. Photoenergy 2012 89759510.1155/2012/897595 ↗
53. Axelevitch and Golan G 2013 Facta Univ. Electron. Energ. 26 18710.2298/FUEE1303187A ↗