journal article·1991-10

Amorphous silicon-based superlattices

S C Agarwal

Bulletin of Materials Science· Volume 14· Issue 5
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Abstract

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (69)

Show source-provided references
1. Abeles B and Tiedje T 1983Phys. Rev. Lett. 51 200310.1103/PhysRevLett.51.2003 ↗
2. Abeles B, Tiedje T, Liang K S, Deckman H W, Stasiewski H C, Scanlon J C and Eisenberger P M 1984J. Noncryst. Solids 66 35110.1016/0022-3093(84)90343-0 ↗
3. Abeles B, Yang L, Persans P D, Stasiewski H and Lanford W 1986Appl. Phys. Lett. 48 16810.1063/1.96932 ↗
4. Abeles B, Yang L and Eberhardt W 1987 inProc. Int. Workshop on Amorphous Semiconductors (eds) H Fritzsche, D -X Han and C C Tsai (Singapore: World Scientific) pp. 205
5. Agarwal S C and Guha S 1985aPhys. Rev. B31 554710.1103/PhysRevB.31.5547 ↗
6. Agarwal S C and Guha S 1985bPhys. Rev. B32 846910.1103/PhysRevB.32.8469 ↗
7. Agarwal S C and Guha S 1985cJ. Noncryst. Solids 77 78 109710.1016/0022-3093(85)90849-X ↗
8. Agarwal S C and Guha S 1986Mater. Res. Soc. Proc. 70 44110.1557/PROC-70-441 ↗
9. Agarwal S C and Guha S 1987 inDisordered semiconductors (eds) M A Kastner, G A Thomas and S R Ovshinsky (New York: Plenum) p. 51910.1007/978-1-4613-1841-5_56 ↗
10. Aker B and Fritzsche H 1983J. Appl. Phys. 54 662810.1063/1.331899 ↗
11. Chen K, Mao G, Jiang S, Xia H, Feng D and Fritzsche H 1989J. Noncryst. Solids 114 78010.1016/0022-3093(89)90718-7 ↗
12. Choi S -H, Park G -L and Lee C 1986Solid State Commun. 59 17710.1016/0038-1098(86)90204-8 ↗
13. Colvard C, Merlin R, Klein M V and Gossard A C 1980Phys. Rev. Lett. 45 29810.1103/PhysRevLett.45.298 ↗
14. Doehler G H 1983a inAdvances in solid state physics: Festkoerperprobleme, (ed.) P Grosse (Philadelphia: Heyden) vol. 23, p. 207
15. Dohler G H 1983bSci. Am. 249 14410.1038/scientificamerican1183-144 ↗
16. Eisenmenger W 1979 inPhysical acoustics (eds) W A Mason and R N Thurson (New York: Academic Press) vol. 12, p. 79
17. Evangelisti F, Fiorini P, Giovannella C, Pattela F, Perfetti P, Quaresima C and Capizzi 1984Appl. Phys. Lett. 44 76410.1063/1.94909 ↗
18. Guang H X, Zhou W H and Xin Y Z 1989J. Noncryst. Solids 114 57610.1016/0022-3093(89)90655-8 ↗
19. Hamakawa Y 1984 inSemiconductors and semimetals (ed.) J I Pankove (New York: Academic Press) vol. 21B, pp. 141–158
20. Hamed A 1989 private communication
21. Hamed A and Fritzche H 1989aPhilos. Mag. Lett. 60 No. 4
22. Hamed A and Fritsche H 1989bJ. Noncryst. Solids 114 71710.1016/0022-3093(89)90698-4 ↗
23. Hattori K, Mori T, Okamoto H and Hamakawa Y 1988aPhys. Rev. Lett. 60 82510.1103/PhysRevLett.60.825 ↗
24. Hattori K, Mori T, Okamoto H and Hamakawa Y 1988bAppl. Phys. Lett. 53 217010.1063/1.100272 ↗
25. Hattori K, Okamoto H and Hamakawa Y 1989aJ. Noncryst. Solids 114 68710.1016/0022-3093(89)90691-1 ↗
26. Hattori K, Tsujishita M, Okamoto H and Hamakawa Y 1989bAppl. Phys. Lett. 55 76310.1063/1.101799 ↗
27. Hattori R, Enomoto T and Shirafuji J 1989cJ. Noncryst. Solids 114 71110.1016/0022-3093(89)90696-0 ↗
28. Hattori R and Shirafuji J 1989dAppl. Phys. Lett. 54 111810.1063/1.101478 ↗
29. Hazma Y, Yamada K, Miyazaki S and Hirose M 1989J. Noncryst. Solids 114 77710.1016/0022-3093(89)90717-5 ↗
30. Hundhausen M, Ley L and Carius R 1984Phys. Rev. Lett. 53 159810.1103/PhysRevLett.53.1598 ↗
31. Hundhausen M and Ley L 1985Phys. Rev. B32 665510.1103/PhysRevB.32.6655 ↗
32. Hundhausen M 1989J. Noncryst. Solids 14 696
33. Ibaraki N and Fritzsche H 1984Phys. Rev. B30 579110.1103/PhysRevB.30.5791 ↗
34. Itoh T, Nitta S and Nonomura S 1989J. Noncryst. Solids 114 72310.1016/0022-3093(89)90700-X ↗
35. Kakalios J and Fritzsche H 1984Phys. Rev. Lett. 53 160210.1103/PhysRevLett.53.1602 ↗
36. Kakalios J, Fritzsche H and Narasimhan K L 1984aAIP Conf. Proc. 120 42510.1063/1.34774 ↗
37. Kakalios J, Fritzsche H, Ibaraki N and Ovshinsky S R 1984bJ. Noncryst. Solids 66 33910.1016/0022-3093(84)90341-7 ↗
38. Kakalios J and Fritzsche H 1985aJ. Noncryst. Solids 77 & 78 110110.1016/0022-3093(85)90850-6 ↗
39. Kakalios J and Fritzsche H 1985bMater. Res. Soc. Proc. 37 29
40. Koblinger O, Mebert J, Dittrich E, Dottliger S and Eisenmmenger W 1986 inPhonon scattering on condensed matter (eds) A C Anderson and J P Wolfe (Berlin: Springer Verlag) p. 15610.1007/978-3-642-82912-3_47 ↗
41. Knights J C 1976Philos. Mag. 34 66310.1080/14786437608223805 ↗
42. LeComber P G, Spear W E, Gibson R A, Hopkinson M, Bhat P K, Searle T M and Austin I G 1985J. Noncryst. Solids 77 & 78 108110.1016/0022-3093(85)90845-2 ↗
43. Liu H, Zhao Z, Feng X, Wang Z and Tang W 1989J. Noncryst. Solids 114 73810.1016/0022-3093(89)90705-9 ↗
44. Mell H and Beyer W 1983J. Noncryst. Solids 59 & 60 40510.1016/0022-3093(83)90606-3 ↗
45. Miyazaki S, Ihara Y and Hirose M 1987Phys. Rev. Lett. 59 12510.1103/PhysRevLett.59.125 ↗
46. Miyazaki S, Kohada Y, Hazama Y and Hirose M 1989J. Noncryst. Solids 114 72310.1016/0022-3093(89)90716-3 ↗
47. Munekata H, Mizuta M and Kukimoto H 1983J. Noncryst. Solids 59 & 60 116710.1016/0022-3093(83)90375-7 ↗
48. Nemanich R J 1986Mater. Res. Soc. Proc. 69 2310.1557/PROC-69-23 ↗
49. Persans P D, Ruppert A F, Abeles B and Tiedje T 1985Phys. Rev. B32 555810.1103/PhysRevB.32.5558 ↗
50. Persans P D 1988 inAmorphous silicon and related materials (ed.) H Fritzsche (Singapore: World Scientific) p. 1045
51. Persans P D, Ruppert A F, Wu Y -J, Abeles B, Lanford W and Pantojas V 1989J. Noncryst. Solids 114 77110.1016/0022-3093(89)90715-1 ↗
52. Raikh M E, Baranovskii S D and Shkolovskii B I 1990Phys. Rev. B41 770110.1103/PhysRevB.41.7701 ↗
53. Roxlo C B, Abeles B and Tiedje T 1984aPhys. Rev. Lett. 52 199410.1103/PhysRevLett.52.1994 ↗
54. Roxlo C B, Abeles B and Persans P 1984bAppl. Phys. Lett. 45 113210.1063/1.95044 ↗
55. Roxlo C B and Abeles B 1986Phys. Rev. B34 252210.1103/PhysRevB.34.2522 ↗
56. Santos P V, Hundhausen M and Ley L 1985J. Noncryst. Solids 77&78 106910.1016/0022-3093(85)90842-7 ↗
57. Santos P V, Hundhausen M and Ley L 1986Phys. Rev. B33 151610.1103/PhysRevB.33.1516 ↗
58. Santos P V and Ley L 1987Phys. Rev. B36 332510.1103/PhysRevB.36.3325 ↗
59. Santos P V and Ley L 1988 inAmorphous silicon and related materials (ed.) H Fritzsche (Singapore: World Scientific) pp. 1071–1097
60. Santos P V and Trodhal H J 1989J. Noncryst. Solids 114 76510.1016/0022-3093(89)90714-X ↗
61. Sette F, Abeles B, Young L, McDowell A, Norman D and Richardson C H 1987J. Noncryst. Solids 97 & 98 89510.1016/0022-3093(87)90215-8 ↗
62. Sheinkman M K and Shik A Ya 1976Sov. Phys.—Semiconductors 10 128
63. Staebler D R and Wronski C R 1977Appl. Phys. Lett. 31 29210.1063/1.89674 ↗
64. Su F C, Levine S, Vanier P E and Kampas F J 1985Appl. Phys. Lett. 47 61210.1063/1.96089 ↗
65. Tiedje T and Abeles B 1984Appl. Phys. Lett. 45 17910.1063/1.95161 ↗
66. Tiedje T, Brooks B G and Abeles B 1984AIP Conf. Proc. 120 416
67. Tsai C C 1989 inAmorphous silicon and related materials (ed.) H Fritzsche (Singapore: World Scientific) p. 12310.1142/9789814434157_0006 ↗
68. Wang W C and Fritzsche H 1987J. Noncryst. Solids 97 & 98 91910.1016/0022-3093(87)90221-3 ↗
69. Wang W C and Fritsche H 1988 inAmorphous silicon and related materials (ed.) H Fritzsche (Singapore: Wolrd Scientific) p. 779