Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (46)
Show source-provided references
1. Golosov D A, Vilya N, Zavadski S M, Melnikov S N, Avramchuk A V, Grekhov M M et al 2019 Thin Solid Films 690 13751710.1016/j.tsf.2019.137517 ↗
2. Khairnar A G and Mahajan A M 2013 Bull. Mater. Sci. 36 25910.1007/s12034-013-0458-z ↗
3. Hlali S, Hizem N and Kalboussi A 2017 Bull. Mater. Sci. 40 103510.1007/s12034-017-1443-8 ↗
4. Cheng B, Cao M, Rao R, Inani A, Voorde P, Vande Greene W M et al 1999 IEEE Trans. Electron Devices 46 153710.1109/16.772508 ↗
5. Chang L, Yang K J, Yeo Y-C, Polishchuk I, King T-J and Hu C 2002 IEEE Trans. Electron Devices 49 228810.1109/TED.2002.807446 ↗
6. Lee J J, Wang X, Bai W, Lu N and Kwong D-L 2003 IEEE Trans. Electron Devices 50 206710.1109/TED.2003.816107 ↗
7. Mallik S, Mukherjee C, Mahata C, Hota M K, Das T, Dalapati G K et al 2012 Thin Solid Films 522 26710.1016/j.tsf.2012.07.111 ↗
8. Mallik S, Mahata C, Hota M K, Sarkar C K and Maiti C K 2011 Thin Solid Films 520 10110.1016/j.tsf.2011.06.057 ↗
9. Jin P, He G, Wang P H, Liu M, Xiao D Q, Gao J et al 2016 J. Alloys Compd. 688 92510.1016/j.jallcom.2016.07.261 ↗
10. Jiang S S, He G, Fang Z B, Wang P H, Liu Y M, Lv J G et al 2018 J. Alloys Compd. 757 28810.1016/j.jallcom.2018.05.091 ↗
11. Lu Q, Mu Y, Roberts J W, Althobaiti M, Dhanak V R, Wu J et al 2015 Materials (Basel) 8 816910.3390/ma8125454 ↗
12. Jin P, He G, Liu M, Xiao D Q, Gao J, Chen X F et al 2015 J. Alloys Compd. 649 12810.1016/j.jallcom.2015.07.076 ↗
13. Huang J, Kirsch P D, Oh J, Lee S H, Price J, Majhi P et al 2008 in 2008 Symposium on VLSI Technology. IEEE pp 8210.1109/VLSIT.2008.4588571 ↗
14. Reiche M, Moutanabbir O, Hoentsche J, Gösele U M, Flachowsky S and Horstmann M 2010 Solid State Phenom. 156 61
15. Chu M, Sun Y, Aghoram U and Thompson S E 2009 Ann. Rev. Mater. Res. 39 20310.1146/annurev-matsci-082908-145312 ↗
16. Lee M L, Fitzgerald E A, Bulsara M T, Currie M T and Lochtefeld A 2005 J. Appl. Phys. 97 110.1007/10828028_1 ↗
17. Karabulut A 2019 Bull. Mater. Sci. 42 510.1007/s12034-018-1696-x ↗
18. Kim S, Konar A, Hwang W-S, Lee J H, Lee J, Yang J et al 2012 Nat. Commun. 3 1
19. Kim Y, Ohmi S, Tsutsui K and Iwai H 2005 Jpn. J. Appl. Phys. 44 403210.1143/JJAP.44.4032 ↗
20. Kalita P K, Sarma B K and Das H L 2003 Bull. Mater. Sci. 26 61310.1007/BF02704325 ↗
21. Bag A, Mallik S and Maiti C K 2014 J. Renew. Sustain. Energy 6 2311010.1063/1.4871285 ↗
22. Hota M K, Bag A, Mallik S, Verma S and Maiti C K 2013 Graphene 1 4510.1166/graph.2013.1010 ↗
23. Miyazaki S 2002 Appl. Surf. Sci. 190 6610.1016/S0169-4332(01)00841-8 ↗
24. Miyazaki S, Nishimura H, Fukuda M, Ley L and Ristein J 1997 Appl. Surf. Sci. 113 58510.1016/S0169-4332(96)00805-7 ↗
25. Carey I V P H, Ren F, Hays D C, Gila B P, Pearton S J, Jang S et al 2017 J. Vac. Sci. Technol. B 35 4120110.1116/1.4984097 ↗
26. Mallik S, Mahata C, Hota M K, Dalapati G K, Chi D Z, Sarkar C K et al 2010 Microelectron. Eng. 87 223410.1016/j.mee.2010.02.009 ↗
27. Lim E W and Ismail R 2015 Electronics 4 58610.3390/electronics4030586 ↗
28. Larson J M and Snyder J P 2006 IEEE Trans. Electron Devices 53 104810.1109/TED.2006.871842 ↗
29. Huang P, Chen S, Zhao Y, Chen B, Gao B and Liu L 2016 IEEE Trans. Electron Devices 63 429510.1109/TED.2016.2612824 ↗
30. Zhang Q, Lu J, Zhai D, Xiao J, He M and Liu J 2020 IEEE Trans. Electron Devices 67 503310.1109/TED.2020.3021369 ↗
31. Chakraborty S, Bera M K, Dalapati G K, Paramanik D, Varma S and Bose P K 2006 Semicond. Sci. Technol. 21 46710.1088/0268-1242/21/4/009 ↗
32. Maiti C K, Maikap S, Chatterjee S, Nandi S K and Samanta S K 2003 Solid State Electron. 47 199510.1016/S0038-1101(03)00219-3 ↗
33. Chen C-Y, Chou J-C and Chou H-T 2009 J. Electrochem. Soc. 156 H22510.1149/1.3068358 ↗
34. Tomida K, Popovici M, Opsomer K, Menou N, Wang W-C and Delabie A 2010 in IOP conference series materials science and engineering (IOP Publishing) p 12023
35. Mikhelashvili V, Lahav A, Brener R and Eisenstein G 2008 Microelectron. Eng. 85 154510.1016/j.mee.2008.02.011 ↗
36. Simmons J G 1967 Phys. Rev. 155 65710.1103/PhysRev.155.657 ↗
37. Arslan E, Bütün S and Ozbay E 2009 Appl. Phys. Lett. 94 14210610.1063/1.3115805 ↗
38. Haddara Y M, Ashburn P and Bagnall D M 2017 in Springer handbook of electronic and photonic materials (Springer) p 110.1007/978-3-319-48933-9_22 ↗
39. Sze S M and Lee M K 2012 in Semiconductor devices: physics and technology (Wiley Global Education) p 549
40. Zhu W J, Ma T-P, Tamagawa T and Kim J, Di Y 2002 IEEE Electron. Device Lett. 23 9710.1109/55.981318 ↗
41. Paskaleva A, Bauer A J, Lemberger M and Zürcher S 2004 J. Appl. Phys. 95 558310.1063/1.1702101 ↗
42. Feng L, Li N, Tian H and Liu Z 2014 J. Mater. Sci. 49 187510.1007/s10853-013-7876-6 ↗
43. Cheong K Y, Moon J H, Kim H J, Bahng W and Kim N-K 2008 J. Appl. Phys. 103 8411310.1063/1.2908870 ↗
44. Mishra M, Bhalla N K, Dash A and Gupta G 2019 Appl. Surf. Sci. 481 37910.1016/j.apsusc.2019.03.125 ↗
45. Bag A, Moon D-B, Park K-H, Cho C-Y and Lee N-E 2019 Sens. Actuators B Chem. 296 12668410.1016/j.snb.2019.126684 ↗
46. Yu T, Jin C G, Dong Y J, Cao D, Zhuge L J and Wu X M 2013 Mater. Sci. Semicond. Process 16 132110.1016/j.mssp.2012.09.013 ↗