Thermal effects on resistive switching in manganite–silicon thin film device
Source abstract
Abstract
In this article, we report the results of the fabrication and studies of Y0.95Ca0.05MnO3/Si device (referred hereafter as YCMO/Si) by pulsed laser deposition (PLD) and its temperature-dependent resistive switching (RS) behaviours measured across the YCMO/Si interface. These temperature (100–300 K)-dependent hysteretic current–voltage (I–V) characteristics have been understood on the basis of various possible charge conduction mechanisms involving the thermal effects on the charge carriers during four different cycles of the RS behaviours. Variations in the values of barrier height and the ratio of free to trapped charge carrier densities with temperature have been discussed for reverse bias mode of this YCMO/Si device. Temperature-dependent temperature coefficient of resistance (TCR) under different applied forward voltages shows an interesting variations in TCR with applied forward voltage, which proves this device as a potential candidate for practical applications.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Transition Metal Oxide Nanomaterials
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