journal article·2020-12

Density functional study of elastic and thermal properties of cubic mercury-zinc-chalcogenide ternary alloys

MANISH DEBBARMA, SUBHENDU DAS, BIMAL DEBNATH, DEBANKITA GHOSH, SAYANTIKA CHANDA, RAHUL BHATTACHARJEE, SURYA CHATTOPADHYAYA

Bulletin of Materials Science· Volume 43· Issue 1
Publisher page

Abstract

First principle calculations of elastic and thermal properties of zinc-blende specimens within HgxZn1–xS, HgxZn1−xSe and HgxZn1−xTe ternary systems are executed. Elastic stiffness constants decrease non-linearly with increasing Hg-concentration in each system. Each cubic sample is mechanically and dynamically stable, elastically anisotropic, compressible against elastic deformation, ductile and fairly plastic. Hardness of specimens in each system reduces with enhancement in Hg-composition. Mixed kind of bonding with dominancy of covalent over ionic in most cases, bond bending over stretching and central type of interatomic bonding forces are calculated. In each system, covalency, Debye temperature and frequency, Debye temperature for acoustic phonon, thermal conductivity and melting temperature of specimens decreases, while Philip ionicity and Gruneisen parameter increases with enhancing Hg-concentration.
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Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (100+)

Show source-provided references
1. Eckelt P 1967 Phys. Status Solidi 23 30710.1002/pssb.19670230131 ↗
2. Huang T L and Ruoff A L 1985 Phys. Rev. B 31 597610.1103/PhysRevB.31.5976 ↗
3. McMahon M I, Nelmes R J, Liu H and Belmonte S A 1996 Phys. Rev. Lett. 77 178110.1103/PhysRevLett.77.1781 ↗
4. Nelmes R J and McMahon M I 1998 in High pressure in semiconductor physics I, T Suski and W Paul (eds) (New York: Academic Press) vol 54, p 14510.1016/S0080-8784(08)60231-8 ↗
5. Shukla S and Kumar S 2012 Pramana-J. Phys. 78 30910.1007/s12043-011-0222-0 ↗
6. Ohta T 2001 J. Opto-Electron. Adv. Mater. 3 609
7. Tanaka K 1989 Phys. Rev. B 39 127010.1103/PhysRevB.39.1270 ↗
8. Furdyna J K 1988 J. Appl. Phys. 64 R2910.1063/1.341700 ↗
9. Dybko K, Szuszkiewicz W, Dynowska E, Paszkowicz W and Witkowska B 1998 Physica B 256 62910.1016/S0921-4526(98)00498-0 ↗
10. Arora G and Ahuja B L 2008 Radiat. Phys. Chem. 77 910.1016/j.radphyschem.2007.07.001 ↗
11. Szuszkiewi W 1979 Phys. Status Solidi B 91 36110.1002/pssb.2220910142 ↗
12. Mycielski A, Kossut J, Dobrowolska M and Dobrowolski W 1982 J. Phys. C 15 329310.1088/0022-3719/15/15/005 ↗
13. Gawlik K U, Kipp L, Skibowski M, Orłowski N and Manzke R 1997 Phys. Rev. Lett. 78 316510.1103/PhysRevLett.78.3165 ↗
14. Groves S H, Brown R N and Pidgeon C R 1967 Phys. Rev. 161 77910.1103/PhysRev.161.779 ↗
15. Mews A, Kadavanich A V, Banin U and Alivisatos A P 1996 Phys. Rev. B 53 R1324210.1103/PhysRevB.53.R13242 ↗
16. Bazarganipour M, Sadri M, Davar F and Salavati-Niasari M 2011 Polyhedron 30 110310.1016/j.poly.2011.01.023 ↗
17. Esmaeili-Zare M, Salavati-Niasari M and Sobhani A 2012 Ultrason. Sonochem. 19 107910.1016/j.ultsonch.2012.01.013 ↗
18. Kim D W, Jang J, Kim H, Cho K and Kim S 2008 Thin Solid Films 516 771510.1016/j.tsf.2008.04.044 ↗
19. Rogach A L, Koktysh D S, Harrison M and Kotov N A 2000 Chem. Mater. 12 152610.1021/cm0000649 ↗
20. Huong C N V, Triboulet R and Lemasson P 1990 J. Cryst. Growth 101 31110.1016/0022-0248(90)90988-W ↗
21. Tomashyk V, Feychuk P and Shcherbak L 2014 Ternary alloys based on II–VI semiconductor compounds (New York: CRC Press)10.1201/b17523 ↗
22. Tamargo M C 2002 II–VI semiconductor materials and their applications optoelectronic properties of semiconductors and superlattices vol 12 (New York: CRC Press)
23. Pawar S M, Pawar B S, Kim J H, Joo O S and Lokhande C D 2011 Curr. Appl. Phys. 11 11710.1016/j.cap.2010.07.007 ↗
24. Howes P, Green M, Johnston C and Crossley A 2008 J. Mater. Chem. 18 347410.1039/b804158j ↗
25. Byun K, Cho K and Kim S 2010 Mater. Chem. Phys. 122 24610.1016/j.matchemphys.2010.02.043 ↗
26. Berlincourt D, Jafee H and Shlozawa L R 1963 Phys. Rev. 129 100910.1103/PhysRev.129.1009 ↗
27. Lee B H 1970 J. Appl. Phys. 41 298410.1063/1.1659349 ↗
28. Lee B H 1970 J. Appl. Phys. 41 298810.1063/1.1659350 ↗
29. Gust W H 1982 J. Appl. Phys. 53 484310.1063/1.331315 ↗
30. Hodgins C G and Irwin J C 1975 Phys. Status Solidi A 28 64710.1002/pssa.2210280231 ↗
31. Vagelatos N, Wehe D and King J S 1974 J. Chem. Phys. 50 361310.1063/1.1681581 ↗
32. Alper T and Saunders G A 1967 J. Phys. Chem. Solids 28 163710.1016/0022-3697(67)90135-7 ↗
33. Lehoczky A, Nelson D A and Whitsett C R 1969 Phys. Rev. 188 106910.1103/PhysRev.188.1069 ↗
34. Collins J G, White G K, Birch J A and Smith T F 1980 J. Phys. C: Solid State Phys. 13 164910.1088/0022-3719/13/9/011 ↗
35. Ford P J, Miller A J, Saunders G A, Yogurtçu Y K, Furdyna J K and Jaczynski M 1982 J. Phys. C: Solid State Phys. 15 65710.1088/0022-3719/15/4/012 ↗
36. Nelson D A, Broerman J G, Paxhia E C and Whitsett C R 1997 Phys. Rev. Lett. 78 88410.1103/PhysRevLett.78.4159 ↗
37. Medelung O (ed) 1982 Landolt Bornstein: numerical data and functional relationship in science and technology vol 17b (Berlin: Springer)
38. Adachi S 2009 Properties of semiconductor alloys (UK: Wiley)10.1002/9780470744383 ↗
39. Abrikosov N Kh, Bankina V B, Poretskaya L V, Shelimova L E and Skudnova E V 1969 Semiconducting II-VI, IV-VI and V-VI compounds (New York: Plenum)
40. Medelung O (ed) 1996 Landolt Bornstein: semiconductors basic data in science & technology (Berlin: Springer)
41. Martin R M 1970 Phys. Rev. B 1 400510.1103/PhysRevB.1.4005 ↗
42. Singh R K and Singh S 1987 Phys. Status Solidi B 140 40710.1002/pssb.2221400211 ↗
43. Khenata R, Bouhemadou A, Sahnoun M, Reshak A H, Baltache H and Rabah M 2006 Comp. Mater. Sci. 38 2910.1016/j.commatsci.2006.01.013 ↗
44. Shen S G 1994 J. Phys.: Condens. Matter 6 8733
45. Soykan C, Kart S O and Cagin T 2010 Arch. Mater. Sci. Eng. 46 115
46. Hamdi I, Aouissi M, Qteish A and Meskini N 2006 Phys. Rev. B 73 110.1103/PhysRevB.73.174114 ↗
47. Casali R A and Christensen N E 1998 Sol. Stat. Commun. 108 79310.1016/S0038-1098(98)00303-2 ↗
48. Bilal M, Shafiq M, Ahmad I and Khan I 2014 J. Semicond. 35 072001110.1088/1674-4926/35/7/072001 ↗
49. Wang H Y, Cao J, Huang X Y and Huang J M 2012 Condens. Matter Phys. 15 1370510.5488/CMP.15.13705 ↗
50. El Haj Hassan F, Al Shafaay B, Meradji H, Ghemid S, Belkhir H and Korek M 2011 Phys. Scr. 84 06560110.1088/0031-8949/84/06/065601 ↗
51. Varshney D, Shriya S and Khenata R 2012 Mater. Chem. Phys. 135 36510.1016/j.matchemphys.2012.04.060 ↗
52. Verma A S, Singh R K and Rathi S K 2009 Physica B 404 405110.1016/j.physb.2009.07.157 ↗
53. Al Shafaay B, El Haj Hassan F and Korek M 2014 Comp. Mater. Sci. 83 10710.1016/j.commatsci.2013.10.044 ↗
54. Jivani A R, Baria J K, Vyas P S and Jani A R 2016 Adv. Mater. Res. 1141 15310.4028/www.scientific.net/AMR.1141.153 ↗
55. Duz I, Erdem I, Kart S O and Kuzucu V 2016 Arch. Mater. Sci. Eng. 79 510.5604/18972764.1227656 ↗
56. Kumar V, Shrivastava A K and Jha V 2010 J. Phys. Chem. Solid 71 151310.1016/j.jpcs.2010.07.012 ↗
57. Xiao-Cui Y, Jie Y, En-Jie Z and Chun-Xiao G 2011 Phys. Status Solidi C 8 170310.1002/pssc.201000754 ↗
58. Mnasri S, Nasrallah S A, Sfina N, Bouarissa N and Said M 2009 Semicond. Sci. Technol. 24 09500810.1088/0268-1242/24/9/095008 ↗
59. Hara K, Machimura H, Usui M, Munekata H, Kukimoto H and Yoshino J 1995 Appl. Phys. Lett. 66 333710.1063/1.113749 ↗
60. Deibuk V G, Dremlyuzhenko S G and Ostapov S E 2005 Semiconductors 39 111110.1134/1.2085255 ↗
61. Murtaza G, Ullah N, Rauf A, Khenata R, Bin Omran S, Sajjad M et al 2015 Mater. Sci. Semicond. Process. 30 46210.1016/j.mssp.2014.10.048 ↗
62. Debbarma M, Sarkar U, Debnath B, Ghosh D, Chanda S, Bhattacharjee R et al 2018 J. Alloys Compd. 748 44610.1016/j.jallcom.2018.03.093 ↗
63. Hohenberg P and Kohn W 1964 Phys. Rev. B 136 86410.1103/PhysRev.136.B864 ↗
64. Kohn W and Sham L 1965 J. Phys. Rev. 140 A113310.1103/PhysRev.140.A1133 ↗
65. Andersen O K 1975 Phys. Rev. B 42 3063
66. Blaha P, Schwarz K, Madsen G H, Kbasnicka D and Luitz J 2014 WIEN2K: an augmented plane wave plus local orbitals program for calculating crystal properties (Austria: Technische Universität Wien)
67. Jamal M, Asadabadi S J, Ahmed I and Aliabad H A R 2014 Comp. Mater. Sci. 95 59210.1016/j.commatsci.2014.08.027 ↗
68. Wu Z and Cohen E R 2006 Phys. Rev. B 73 23511610.1103/PhysRevB.73.235116 ↗
69. Kokalj A 2003 Comp. Mater. Sci. 28 15510.1016/S0927-0256(03)00104-6 ↗
70. Murnaghan F D 1944 Proc. Natl. Acad. Sci. USA 30 24410.1073/pnas.30.9.244 ↗
71. Mouhat F and Coudert F X 2014 Phys. Rev. B 90 22410410.1103/PhysRevB.90.224104 ↗
72. Adachi S 2005 Properties of group-IV, III–V and II–VI semiconductors (UK: Wiley)
73. Born M and Huang K 1954 Dynamics theory of crystal lattices (UK: Oxford University Press)
74. Hill R 1952 Proc. Phys. Soc. Lond. A 65 34910.1088/0370-1298/65/5/307 ↗
75. Voigt W 1889 Ann. Phys. 38 57310.1002/andp.18892741206 ↗
76. Reuss A 1929 Z. Angew. Math. Phys. 9 4910.1002/zamm.19290090104 ↗
77. Ledbetter H M 1973 J. Appl. Phys. 44 145110.1063/1.1662392 ↗
78. Hashin Z and Shtrikman S 1962 J. Mech. Phys. Solids 10 34310.1016/0022-5096(62)90005-4 ↗
79. Teter D 1998 MRS Bull. 23 2210.1557/S0883769400031420 ↗
80. Chen X Q, Niu H Y, Li D Z and Li Y Y 2011 Intermetallics 19 127510.1016/j.intermet.2011.03.026 ↗
81. Frantsevich I N, Voronov F F and Bokuta S A 1983 Elastic constants and elastic moduli of metals and insulators handbook (Kiev: Naukova Dumka)
82. Kleinman L 1962 Phys. Rev. 128 261410.1103/PhysRev.128.2614 ↗
83. Vitos L, Korzhavyi P A and Johansson B 2003 Nat. Mater. 2 2510.1038/nmat790 ↗
84. Pugh S F 1954 Philos. Mag. 45 82310.1080/14786440808520496 ↗
85. Pettifor D G 1992 Mater. Sci. Technol. 8 34510.1179/mst.1992.8.4.345 ↗
86. Li S, Li S and Ju X 2017 J. Alloys Compd. 695 291610.1016/j.jallcom.2016.11.385 ↗
87. Hershey A V 1954 J. Appl. Mech. 21 23610.1115/1.4010899 ↗
88. Potter R Y 1957 J. Phys. Chem. Solid 3 22310.1016/0022-3697(57)90026-4 ↗
89. Mavroides J G and Kolesar D F 1964 Solid State Commun. 2 36310.1016/0038-1098(64)90182-6 ↗
90. Kumazaki K 1976 Phys. Status Solidi A 33 61510.1002/pssa.2210330221 ↗
91. Phillips J C 1970 Rev. Mod. Phys. 42 31710.1103/RevModPhys.42.317 ↗
92. Hiadsi S, Bouafia H, Sahli B, Abidri B, Bouaza A and Akriche A 2016 Solid State Sci. 58 110.1016/j.solidstatesciences.2016.05.005 ↗
93. Zhang X D, Hou Z F, Jiang Z Y and Hou Y Q 2011 Physica B 406 219610.1016/j.physb.2011.03.029 ↗
94. Huang W and Yang L 2015 Can. J. Phys. 93 110.1139/cjp-2013-0667 ↗
95. Jia T, Chen G and Zhang Y 2017 Phys. Rev. B 95 15520610.1103/PhysRevB.95.155206 ↗
96. Belomestnykh V N 2004 Tech. Phys. Lett. 30 9110.1134/1.1666949 ↗
97. Clarke D R and Phillpot S R 2005 Mater. Today 8 2210.1016/S1369-7021(05)70934-2 ↗
98. Clarke D R 2003 Surf. Coat. Technol. 67 163
99. Liu B, Wang J Y, Li F Z and Zhou Y C 2010 Acta Mater. 58 436910.1016/j.actamat.2010.04.031 ↗
100. Fine M E, Brown L D and Marcus H L 1984 Scr. Metall. 18 95110.1016/0036-9748(84)90267-9 ↗