ZrO2 as a high-K dielectric for strained SiGe MOS devices
Source abstract
Abstract
The potential of ZrO2 thin film as a high-K gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 A with a leakage current of the order of 10-4 A/cm2 at 1 V has been obtained. Well-behaved capacitance-voltage characteristics with an interface state density of 2 × 1011 cm-2eV-1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
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References (18)
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1. Autran J L, Devine R, Chaneliere C and Balland B 1997IEEE Electron Device Lett. 18 44710.1109/55.622525 ↗
2. Buchanan D A and Lo S H 1997Microelectron. Eng. 36 1310.1016/S0167-9317(97)00007-5 ↗
3. Crabbe E F, Comfort J H, Lee W, Cressler J D, Meyerson B S, Megdanis A C, Sun J Y C and Stork J M C 1992IEEE Electron. Device Lett. 13 25910.1109/55.145046 ↗
4. Guo X, Ma T P, Tamagawa T and Halpern B L 1998Tech. Dig. Int. Electron. Devices Meet.377
5. Hao M Y, Maiti B and Lee J C 1994Appl. Phys. Lett. 64 210210.1063/1.111696 ↗
6. He B, Ma T, Campbell S A and Gladfelter W L 1998Tech. Dig. Int. Electron Devices Meet. 1038
7. Hubbard K J and Scholm D G 1996J. Mater. Res. 11 275710.1557/JMR.1996.0350 ↗
8. Hull R, Bean J C, Werder D J and Leibenguth R E 1988Appl. Phys. Lett. 52 160510.1063/1.99055 ↗
9. Le Goues F K, Rosenberg R and Meyerson B S 1989Appl. Phys. Lett. 54 64410.1063/1.100905 ↗
10. Luan H F, Wu B Z, Kang L G, Kim B Y, Vrtis R, Roberts D and Kwong D L 1998Tech. Dig. Int. Electron. Devices Meet. 609
11. Mckee R A, Walker F J and Chisholm MF 1998Phys. Rev. Lett. 81 301410.1103/PhysRevLett.81.3014 ↗
12. Park D, Lu Q, Ling T J, Hu C, Kalnitsky A, Tay S and Cheng C C 1998Tech. Dig. Int. Electron. Devices Meet. 381
13. People R 1986IEEEJ. Quantum Electron. 22 169610.1109/JQE.1986.1073152 ↗
14. Robertson J, Riassi E, Maria J P and Kingon A L 2000J. Vac. Sci. Technol. B18 178510.1116/1.591472 ↗
15. Sharma R, Fretwell J L, Ngai T and Banerjee S 1999J. Vac. Sci. Technol. B17 46010.1116/1.590576 ↗
16. Tchikatilov D, Yang Y F and Yang E S 1996Appl. Phys. Lett. 69 257810.1063/1.117705 ↗
17. Terman M L 1962Solid State Electron. 5 28510.1016/0038-1101(62)90111-9 ↗
18. van Dover R B, Fleming R M, Schneemeyer L F, Alers G B and Werder D J 1998Tech. Dig. Int. Electron Devices Meet. 823