journal article·2015-09

Synthesis and characterization of Sn-doped CdZnS nanoparticles

R SHRIVASTAVA, S C SHRIVASTAVA

Bulletin of Materials Science· Volume 38· Issue 5
Publisher page

Abstract

Tin (Sn)-doped cadmium zinc sulphide nanoparticles (CdZnS: Sn) were synthesized by the chemical bath deposition method with two different concentrations of Sn (2 and 4 mol%). X-ray diffraction (XRD) pattern reveals the formation of CdZnS nanoparticles with cubic and hexagonal structure. It was observed that the presence of Sn does not alter the structure of CdZnS. Average crystallite size was measured from XRD data by using Scherrer’s formula. From the study of absorption spectra, band-to-band absorption was obtained at 460 and 490 nm, respectively, for the Sn-doped (2 and 4 mol%) CdZnS nanoparticles. Energy bandgap for undoped and Sn-doped CdZnS varies from 3.5 to 2.9 eV with error ±0.05 eV. The presence of Sn was confirmed by energy-dispersive X-ray analysis. The effect of dopant concentration on the photoluminescence (PL) intensity has also been studied. The PL emission peak has been observed at 540, 550 and 560 nm for the Sn-doped (CdZnS, CdZnS 2 mol% and CdZnS 4 mol%), respectively, nanoparticles. XRD and PL analyses demonstrate that the Sn2+ ions uniformly substitute Cd2+ sites or interstitial sites in CdZnS lattice, which influence the optical properties. Increase in the concentration of Sn shifts the UV–vis absorption spectra and PL emission spectra towards higher wavelength side. Particle size and the crystallinity of CdZnS : Sn nanoparticles were confirmed through atomic force microscopy.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (24)

Show source-provided references
1. Maqbool M, Ahmad I, Richardson H H and Kordesch M E 2007 Appl. Phys. Lett. 91 19351110.1063/1.2809607 ↗
2. Karpier I A 2014 Int. J. Miner. Metall. Mater. 21 83210.1007/s12613-014-0978-6 ↗
3. Maqbool M, Richardson H H and Kordesch M E 2007 J. Mater. Sci. 42 565710.1007/s10853-006-0730-3 ↗
4. Maqbool M 2006 Eur. Phys. J. Appl. Phys. 34 3110.1051/epjap:2006027 ↗
5. Okamoto K, Yoshimi T and Miura S 1988 Appl. Phys. Lett. 53 67810.1063/1.99848 ↗
6. Jayaraj M K and Vallabhan C P G 1991 J. Electrochem. Soc. 138 151210.1149/1.2085817 ↗
7. Lozykowski H J, Jadwisienkzak W M and Brown I 2000 J. Appl. Phys. 88 21010.1063/1.373645 ↗
8. Liu G K, Zhuang H Z and Chen X Y 2002 Nano Lett. 2 53510.1021/nl0255303 ↗
9. Zych E, Hreniak D and Strek W 2002 J. Phys. Chem. B 106 380510.1021/jp012468+ ↗
10. Liqiang J, Xiaojun S, Baifu X, Baiqi W, Weimin C and Honggang F 2004 Mater. Sci. Technol. 12 148
11. Guo G, Li D, Wang Z and Guo H 2005 J. Rare Earths 23 362
12. Vij A, Singh S, Kumar R, Lochab S P, Kumar V V S and Singh N 2009 J. Phys. D: Appl. Phys. 42 10510310.1088/0022-3727/42/10/105103 ↗
13. Sharma G, Chawla P, Lochab S P and Singh N 2009 Radiat. Effects Defects Solids 164 76310.1080/10420150903401648 ↗
14. Kumar V, Pitale S S, Mishra V, Nagpure I M, Biggs M M and Ntwaeaborwa O M 2010 J. Alloys Compd. 492 L8–510.1016/j.jallcom.2009.11.076 ↗
15. Petre D, Pintilie I, Pentia E, Pintilie I and Botila T 1999 Mater. Sci. Eng. B 58 23810.1016/S0921-5107(98)00435-8 ↗
16. Khallaf H, Chai G, Lupan O, Chow L, Park S and Schulte A 2009 Appl. Surf. Sci. 255 412910.1016/j.apsusc.2008.10.115 ↗
17. Davila-Pintle J A, Lozada-Morales R L, Palomino-Merino M R, Rivera-Márquez J A, Portillo-Moreno O P and Zelaya-Angel O Z 2007 J. Appl. Phys. 101 01371210.1063/1.2408380 ↗
18. Devi R, Kalita P K, Purkayastha P and Sharma B K 2008 Indian J. Phys. 82 707
19. Thomas D G and Hopfield J 1962 J. Phys. Rev. 128 213510.1103/PhysRev.128.2135 ↗
20. Jeong T S and Yu P Y 2000 J. Phys. Soc. (Korea) 36 102
21. Roy P and Srivastava S K 2009 J. Phys. D 39 477110.1088/0022-3727/39/22/006 ↗
22. Saravanan L 2012 Mater. Lett. 66 34310.1016/j.matlet.2011.09.006 ↗
23. Benelmadjat H, Boudine B, Halimi O and Sebais M 2009 Opt. Laser Technol. 41 63010.1016/j.optlastec.2008.09.011 ↗
24. Mott N and Davis E 1979 Electronic processes in noncrystralline materials (Oxford, UK: Clarendon) 2nd edn, vol. 17, p 122