Characterization of electroless nickel as a seed layer for silicon solar cell metallization

Electroless nickel plating is a suitable method for seed layer deposition in Ni–Cu-based solar cell metallization. Nickel silicide formation and hence contact resistivity of the interface is largely influenced by the plating process and annealing conditions. In the present work, a thin seed layer is deposited from neutral pH and alkaline electroless nickel baths which are annealed in the range of 400–420∘C for silicide morphology and contact resistivity studies. A minimum contact resistivity of 7 mΩ cm2 is obtained for seed layer deposited from alkaline bath. Silicide formation for Pd-activated samples leads to uniform surface morphology as compared with unactivated samples due to non-homogeneous migration of nickel atoms at the interface. Formation of nickel phosphides during annealing and the presence of SiO2 at Ni–Si interface creates isolated Ni2Si–Si interface with limited supply of silicon. Such an interface leads to the formation of high resistivity metal-rich Ni3Si silicide phase which limits the reduction in contact resistivity.