Novel caged clusters of silicon: Fullerenes, Frank-Kasper polyhedron and cubic
Source abstract
Abstract
We review recent findings of metal (M) encapsulated caged clusters of Si and Ge obtained from computer experiments based on an ab initio pseudopotential method. It is shown that one M atom changes drastically the properties of Si and Ge clusters and that depending upon the size of the M atom, cages of 14, 15, and 16 Si as well as Ge atoms are formed. In particular M@Si16 silicon fullerene has been obtained for M= Zr and Hf, while a Frank-Kasper polyhedron has been obtained for M@X16, X = Si and Ge. These clusters show high stability and large highest occupied-lowest unoccupied molecular orbital (HOMO-LUMO) gaps which are likely to make these species strongly abundant. A regular icosahedral M@X12 cluster has also been obtained for X = Ge and Sn by doping a divalent M atom. Interactions between clusters are rather weak. This is attractive for developing self-assembled cluster materials.
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Research context
OpenAlex topics: Graphene research and applications · Fullerene Chemistry and Applications · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
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1. Beck S M 1989J. Chem. Phys. 90 630610.1063/1.456684 ↗
2. Hiura H, Miyazaki T and Kanayama T 2001Phys. Rev. Lett. 86 173310.1103/PhysRevLett.86.1733 ↗
3. Ho K-M, Shvartsburg A A, Pan B, Lu Z Y, Wang C Z, Wacker J G, Fye J L and Jarrold M F 1998Nature 392 58210.1038/33369 ↗
4. Jackson K and Nellermoe B 1996Chem. Phys. Lett. 254 24910.1016/0009-2614(96)00315-6 ↗
5. Jarrold M F and Bower J E 1988J. Phys. Chem. 92 570210.1021/j100331a031 ↗
6. Kresse G and Furthmüller G 1996Phys. Rev. B55 11 169
7. Kumar V, Esfarjani K and Kawazoe Y 2002 inClusters and nanomaterials, Springer Series in Cluster Physics (eds) Y Kawazoeet al (Heidelberg: Springer Verlag) p. 9
8. Kumar V and Kawazoe Y 2001Phys. Rev. Lett. 87 04550310.1103/PhysRevLett.87.045503 ↗
9. Kumar V and Kawazoe Y 2002aAppl. Phys. Lett. 80 85910.1063/1.1447315 ↗
10. Kumar V and Kawazoe Y 2002bPhys. Rev. B65 07340410.1103/PhysRevB.65.073404 ↗
11. Kumar V and Kawazoe Y 2002cPhys. Rev. Lett. 88 23550410.1103/PhysRevLett.88.235504 ↗
12. Mitas L, Grossman J C, Stich I and Tobik J 2000Phys. Rev. Lett. 84 147910.1103/PhysRevLett.84.1479 ↗
13. Perdew J P 1991 inElectronic structure of solids ’91 (eds) P Ziesche and H Eschrig (Berlin: Akademie Verlag)
14. Röthlisberger U, Andreoni W and Parrinello M 1994Phys. Rev. Lett. 72 66510.1103/PhysRevLett.72.665 ↗