journal article·2015-02

Electroluminescence and negative differential resistance studies of TPD:PBD:Alq3 blend organic-light-emitting diodes

M A MOHD SARJIDAN, S H BASRI, N K ZA’ABA, M S ZAINI, W H ABD MAJID

Bulletin of Materials Science· Volume 38· Issue 1
Publisher page

Abstract

Ternary system of single-layer organic-light-emitting diodes (OLEDs) were fabricated containing tris(8-hydroxyquinoline) aluminium (Alq 3 ) blended with N,N ′-diphenyl-N,N ′-bis(3-methylphenyl)-1,1 ′-biphenyl-4,4 ′-diamine and 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole small molecules. Electroluminescence properties were investigated with respect to blend systems. Significant improvement in turn-on voltage and luminance intensity was observed by employing the blends technique. Negative differential resistance (NDR) characteristics observed at a low voltage region in blended OLED is related to the generation of guest hopping site and phonon scattering phenomenon. However, luminescence of the devices is not altered by the NDR effect.
Source: expertdata · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (35)

Show source-provided references
1. Shirakawa H, Louis E J, MacDiarmid A G, Chiang C K and Heeger A J 1977 J. Chem. Soc. Chem. Commun. 16 57810.1039/c39770000578 ↗
2. Tang C W and VanSlyke S A 1987 Appl. Phys. Lett. 51 91310.1063/1.98799 ↗
3. Dawson R M A et al 1998 The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays. Paper presented at the Electron Devices Meeting, 6–9 December 1998. IEDM ’98. Technical Digest International
4. Singh R, Narayanan Unni K N, Solanki A and Deepak 2012 Opt. Mater. 34 71610.1016/j.optmat.2011.10.005 ↗
5. Choy W C H and Ho C Y 2007 Opt. Express 15 1328810.1364/OE.15.013288 ↗
6. Sempel A and Büchel M 2002 Org. Electron. 3 8910.1016/S1566-1199(02)00036-8 ↗
7. Xie G et al 2010 Org. Electron. 11 40710.1016/j.orgel.2009.11.019 ↗
8. Hebner T R, Wu C C, Marcy D, Lu M H and Sturm J C 1998 Appl. Phys. Lett. 72 51910.1063/1.120807 ↗
9. Valadares M et al 2009 Mater. Sci. Eng. C 29 57110.1016/j.msec.2008.10.006 ↗
10. Lee D H, Choi J S, Chae H, Chung C H and Cho S M 2009 Curr. Appl. Phys. 9 16110.1016/j.cap.2008.01.004 ↗
11. Reyes R, Cremona M, Teotonio E E S, Brito H F and Malta O L 2004 Chem. Phys. Lett. 396 5410.1016/j.cplett.2004.07.074 ↗
12. Cossiello R F, Cirpan A, Karasz F E, Akcelrud L and Atvars T D Z 2008 Synth. Met. 158 21910.1016/j.synthmet.2008.01.011 ↗
13. Yap C C, Yahaya M and Salleh M M 2008 Curr. Appl. Phys. 8 63710.1016/j.cap.2007.11.006 ↗
14. Yap C C, Yahaya M and Salleh M M 2009 Curr. Appl. Phys. 9 72210.1016/j.cap.2008.06.013 ↗
15. Camurlu P et al 2009 Synth. Met. 159 4110.1016/j.synthmet.2008.07.018 ↗
16. Kim S -J et al 2011 Org. Electron. 12 49210.1016/j.orgel.2010.12.006 ↗
17. Lee W J et al 2003a Solid-State Electron. 47 92710.1016/S0038-1101(02)00393-3 ↗
18. Xie G et al 2008 Appl. Phys. Lett. 92 09330510.1063/1.2890490 ↗
19. Nie H, Zhang B and Tang X Z 2007 Chin. Phys. 16 73010.1088/1009-1963/16/3/028 ↗
20. Chopra N et al 2008 Appl. Phys. Lett. 93 14330710.1063/1.3000382 ↗
21. Kao P -C, Lin J -H, Wang J -Y, Yang C -H and Chen S -H 2011 J. Appl. Phys. 109 09450510.1063/1.3585767 ↗
22. Zhang T et al 2005, J. Appl. Phys. 98 06350310.1063/1.2042532 ↗
23. Fang J, Chan Choy C, Ma D and Ou E C W 2006 Thin Solid Films 515 241910.1016/j.tsf.2006.05.031 ↗
24. Kin Z, Kajii H, Hasegawa Y, Kawai T and Ohmori Y 2008 Thin Solid Films 516 273510.1016/j.tsf.2007.04.060 ↗
25. Costela A et al 2004 Chem. Phys. Lett. 387 49610.1016/j.cplett.2004.02.048 ↗
26. Kalinowski J and Szybowska K 2008 Org. Electron. 9 103210.1016/j.orgel.2008.08.006 ↗
27. Lee C E et al 2001 Curr. Appl. Phys. 1 10710.1016/S1567-1739(00)00020-1 ↗
28. Blochwitz J, Pfeiffer M, Fritz T and Leo K 1998 Appl. Phys. Lett. 73 72910.1063/1.121982 ↗
29. Berleb S, Brütting W and Schwoerer M 1999 Synth. Met. 102 103410.1016/S0379-6779(98)00210-0 ↗
30. Manca J et al 1998 Opt. Mater. 9 13410.1016/S0925-3467(97)00094-3 ↗
31. Fang Y K et al 2008 J. Phys. Chem. Solids 69 73810.1016/j.jpcs.2007.07.067 ↗
32. Lee W J et al 2003b Solid-State Electron. 47 112710.1016/S0038-1101(02)00497-5 ↗
33. Kim Y S, Jung S Y, Koh K H, Lee S and Ko K Y 2008 J. Korean Phys. Soc. 53 356310.3938/jkps.53.3563 ↗
34. Nan G, Yang X, Wang L, Shuai Z and Zhao Y 2009 Phys. Rev. B 79 11520310.1103/PhysRevB.79.115203 ↗
35. de Deus J F et al 2011 Org. Electron. 12 149310.1016/j.orgel.2011.04.022 ↗