journal article·2024-02-19Open access

Effect of erbium-doping concentration on the electrical, structural and morphological properties of heterostructures based on TiO2 thin films

FAISAL S AL MASHARY, JOÃO PAULO DE OLIVEIRA LIMA, ANIRUDDHA MONDAL, SANJIB MONDAL, ANUPAM GHOSH, DLER A JAMEEL, SULTAN ALHASSAN, MARYAM M AL HUWAYZ, SAUD ALOTAIBI, MOHAMED HENINI, JORLANDIO FRANCISCO FELIX

Bulletin of Materials Science· Volume 47· Issue 1

Abstract

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OpenAlex topics: TiO2 Photocatalysis and Solar Cells · Semiconductor materials and devices · ZnO doping and properties

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References (42)

Show source-provided references
1. Howard C J, Sabine T M and Dickson F 1991 Acta Crystallogr. B Struct. Sci. Cryst. Eng. Mater. 47 46210.1107/S010876819100335X ↗
2. Reyes-Coronado D, Rodríguez-Gattorno G, Espinosa-Pesqueira M E, Cab C, de Coss R and Oskam G 2008 Nanotechnology 19 14560510.1088/0957-4484/19/14/145605 ↗
3. Hashimoto K, Irie H and Fujishima A 2005 Jpn. J. Appl. Phys. 44 826910.1143/JJAP.44.8269 ↗
4. Sarkar M B, Mondal A, Choudhuri B, Mahajan B K, Chakrabartty S and Ngangbam C 2014 J. Alloys Compd. 615 44010.1016/j.jallcom.2014.06.184 ↗
5. Chinnamuthu P, Mondal A, Singh N K, Dhar J C, Chattopadhyay K K and Bhattacharya S 2012 J. Appl. Phys. 112 05431510.1063/1.4749801 ↗
6. Henderson M A 2011 Surf. Sci. Rep. 66 18510.1016/j.surfrep.2011.01.001 ↗
7. Fujishima A, Zhang X and Tryk D A 2008 Surf. Sci. Rep. 63 51510.1016/j.surfrep.2008.10.001 ↗
8. Diebold U 2003 Surf. Sci. Rep. 48 5310.1016/S0167-5729(02)00100-0 ↗
9. Park N G, Van de Lagemaat J and Frank A J 2000 J. Phys. Chem. B 104 898910.1021/jp994365l ↗
10. Fujishima A and Honda K 1972 Nature 238 3710.1038/238037a0 ↗
11. Xie T, Sullivan N, Steffens K, Wen B, Liu G, Debnathac R et al 2015 J. Alloys Compd. 653 25510.1016/j.jallcom.2015.09.021 ↗
12. Liu L, Li X, Dutta P K and Wang J 2013 Sens. Actuators B Chem. 185 110.1016/j.snb.2013.04.090 ↗
13. Cao C, Chenguo H, Wang X, Wang S, Tian Y and Zhang H 2011 Sens. Actuators B Chem. 156 11410.1016/j.snb.2011.03.080 ↗
14. Cheong P, Chang K F, Lai Y H, Ho S K, Sou I K and Tam K W 2011 IEEE Trans. Ind. Electron. 58 527110.1109/TIE.2011.2119455 ↗
15. Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 743310.1063/1.362677 ↗
16. Shi L and Nihtianov S 2012 IEEE Sens. J. 12 245310.1109/JSEN.2012.2192103 ↗
17. Sang L, Liao M and Sumiya M 2013 Sensors 13 1048210.3390/s130810482 ↗
18. Bertuccio G, Puglisi D, Torrisi L and Lanzieri C 2013 Appl. Surf. Sci. 272 12810.1016/j.apsusc.2012.03.183 ↗
19. Ye Ji, Shan C-X, Qiao Q, Xie X-H, Wang S-P, Zhang Z-Z et al 2012 Sensors 12 128010.3390/s120201170 ↗
20. Mondal A, Shougaijam B, Goswami T, Dhar J C, Singh N K, Choudhury S et al 2014 Appl. Phys. A 115 35310.1007/s00339-013-7835-8 ↗
21. Tiwari A K, Mondal A, Mahajan B K, Choudhuri B, Goswami T, Sarkar M B et al 2015 J. Nanosci. Nanotechnol. 15 509910.1166/jnn.2015.9821 ↗
22. Lahiri R, Ghosh A, Dwivedi S M M D, Chakrabartty S, Chinnamuthu P and Mondal A 2017 Appl. Phys. A 123 57310.1007/s00339-017-1180-2 ↗
23. Morgan B J and Watson G W 2009 Phys. Rev. B 80 23310210.1103/PhysRevB.80.233102 ↗
24. Lang D V 1974 J. Appl. Phys. 45 302310.1063/1.1663719 ↗
25. Mondal S, Ghosh A, Piton M R, Gomes J P, Felix J F, Gobato Y G et al 2018 J. Mater. Sci.: Mater. Electron. 29 19588
26. Choi H C, Jung Y M and Kim S B 2005 Vib. Spectrosc. 37 3310.1016/j.vibspec.2004.05.006 ↗
27. Zhang W F, He Y L, Zhang M S, Yin Z and Chen Q 2000 J. Phys. D: Appl. Phys. 33 91210.1088/0022-3727/33/8/305 ↗
28. Cui J and Hope GA 2015 J. Spectrosc. (Hindawi) 2015 3
29. Sze S M and Lee M K 2013 Semiconductor devices: physics and technology (Singapore: Wiley)
30. Pillai P B, Corpus Mendoza A N, De Souza M M, Bree G and Jeng D 2014 J. Renew. Sustain. Energy 6 01314210.1063/1.4866260 ↗
31. Werner J H 1988 Appl. Phys. A 47 29110.1007/BF00615935 ↗
32. Lakshmi Devi V, Jyothi I, Rajagopal Reddy V and Choi C J 2012 Open Appl. Phys. J. 5 110.2174/1874183501205010001 ↗
33. Van Nguyen C and Potje-Kamloth K 2001 Thin Solid Films 392 11310.1016/S0040-6090(01)00837-9 ↗
34. Aydoğan Ş, Sağlam M and Türüt, 2005 Appl. Surf. Sci. 250 4310.1016/j.apsusc.2004.12.020 ↗
35. Jameel D A, Felix J F, Aziz M, Al Saqri N, Taylor D, Mde Azevedo W et al 2015 Appl. Surf. Sci. 357 218910.1016/j.apsusc.2015.09.209 ↗
36. Korucu D, Efeoglu H, Turut A and Altindal S 2012 Mater. Sci. Semicond. Process. 15 48010.1016/j.mssp.2012.03.005 ↗
37. Chand S and Kumar J 1996 Semicond. Sci. Technol. 11 120310.1088/0268-1242/11/8/015 ↗
38. AlMashary F S, de Castro S, da Silva A F, Felix J F, Piton M R, Galeti H V A et al 2018 J. Alloys Compd. 766 19410.1016/j.jallcom.2018.06.360 ↗
39. Dobaczewski L, Peaker A R and Bonde Nielsen K 2004 J. Appl. Phys. 96 468910.1063/1.1794897 ↗
40. Salama A M and Cheng L J 1980 J. Electrochem. Soc. 127 116410.1149/1.2129839 ↗
41. Wang E, Yang W and Cao Y 2009 J. Phys. Chem. C 113 2091210.1021/jp9041793 ↗
42. Miyagi T, Kamei M, Sakaguchi I, Mitsuhashi T and Yamazaki A 2004 Jpn. J. Appl. Phys. 43 77510.1143/JJAP.43.775 ↗