Superconducting epitaxial $$\hbox {YBa}₂\hbox {Cu}₃\hbox {O}_7-\delta $$ YBa 2 Cu 3 O 7 - δ on $$\hbox {SrTiO}₃$$ SrTiO 3 -buffered Si(001)

Thin films of optimally doped(001)-oriented (hbox {YBa}₂hbox {Cu}₃hbox {O}_7-updelta ) are epitaxially integrated on silicon(001) through growth on a single crystalline (hbox {SrTiO}₃) buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the (hbox {SrTiO}₃) buffer enables high quality (hbox {YBa}₂hbox {Cu}₃hbox {O}_7-updelta ) films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick (hbox {SrTiO}₃) buffer, 50-nm thick (hbox {YBa}₂hbox {Cu}₃hbox {O}_7-updelta ) films that exhibit a transition temperature of (sim )93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline (hbox {YBa}₂hbox {Cu}₃hbox {O}_7-updelta ) on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.