High pressure phase transitions for CdSe
Source abstract
Abstract
The structure and pressure-induced phase transitions for CdSe are investigated using first- principles calculations. The pressure-induced phase transition sequence WZ/ZB → Rs → Cmcm → CsCl for CdSe is drawn reasonably for the fist time, the corresponding transition pressures are 3.8, 29 and 107 GPa, respectively and the intermediate states between the Cmcm structure and the CsCl structure should exist.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · High-pressure geophysics and materials · Quantum Dots Synthesis And Properties
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