Study of annealing effects in Al-Sb bilayer thin films
Source abstract
Abstract
In this paper, we present preparation and characterization of Al-Sb bilayer thin films. Thin films of thicknesses, 3000/1000 A and 3000/1500 A, were obtained by the thermal evaporation (resistive heating) method. Vacuum annealing and rapid thermal annealing methods were used to mix bilayer thin film structure. Results obtained from optical band gap data and Rutherford back scattering spectrometry showed mixing of Al-Sb bilayer system.
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Research context
OpenAlex topics: Semiconductor materials and devices · Ion-surface interactions and analysis · Diamond and Carbon-based Materials Research
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References (14)
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1. Bhargava N R (ed) 1997 Properties of wide band gap II–VI semi-conductors (London, UK: INSPEC, IEE)
2. Dhar S, Schaaf P, Lieb K P, Bibic N, Milosavljevic M, Sajavaara T, Keinonen J and Traverse A 2003 Nucl. Instrum. & Meth. Phys. Res. B205 74110.1016/S0168-583X(03)00578-0 ↗
3. Herczog A, Haberecut R R and Middelton A E 1958 J. Electrochem. Soc. 105 53310.1149/1.2428915 ↗
4. Holloway K and Sinclair R 1987 J. Appl. Phys. 61 410.1063/1.338114 ↗
5. Kim H, Horwitz J S, Pique, Gilmore C M and Chrisey D B 1999 Appl. Phys. A69 S44710.1007/s003390051435 ↗
6. Kraft S, Schattat B and Bolse W 2002 J. Appl. Phys. 91 112910.1063/1.1425439 ↗
7. Niwa Hiroaki, Nakao Setsuo and Saitoh Kazuo 1998 Nucl. Instrum. & Meth. Phys. Res. B136 297
8. Raghvan G, Rao Venugopal, Amarendra G, Tyagi A K and Viswanathan B 2000 Appl. Surf. Sci. 7066 1
9. Richards J L, Hart P B and Gallone L M 1963 J. Appl. Phys. 37 341810.1063/1.1729216 ↗
10. Rittner E S 1954 Phys. Rev. 96 170810.1103/PhysRev.96.1708 ↗
11. Singh M and Vijay Y K 2004a Appl. Surf. Sci. 239 7910.1016/S0169-4332(04)00614-2 ↗
12. Singh M and Vijay Y K 2004b Indian J. Pure & Appl. Phys. 42 610
13. Tauc J (ed.) 1974 Amorphous and liquid semiconductors (New York: Plenum Press) p. 15910.1007/978-1-4615-8705-7_4 ↗
14. Yu K M, Moll A J, Chan N, Walukiewicz W and Becla P 1995 Appl. Phys. Lett. 66 240610.1063/1.113955 ↗