Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces
Source abstract
Abstract
Water adsorption on clean and hydrogenated Si(100) surfaces was studied under ultra high vacuum conditions using surface infrared spectroscopy. The study shows that H-Si-Si-OH and SiH2 species are formed on Si(100)-(2 × 1) and Si(100)-(2 × 1)-H surfaces, respectively. The reactivity behaviour of Si(100)-(3 × 1)-H and Si(100)-(1 × 1)-H is similar, both stabilizing oxygen inserted silicon dihydrides.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Ashkenasy G, Cahen D, Cohen R, Shanzer A and Vilan A 2002Acc. Chem. Res. 35 12110.1021/ar990047t ↗
2. Bitzera T, Richardson N V and Schiffrin D J 1997Surf. Sci. 382 L68610.1016/S0039-6028(97)00166-0 ↗
3. Buriak J M 2002Chem. Rev. 102 127110.1021/cr000064s ↗
4. Chabal Y J and Raghavachari K 2002Surf. Sci. 502-503 4110.1016/S0039-6028(01)01896-9 ↗
5. Ehrley E, Butz R and Mantl S 1991Surf. Sci. 248 19310.1016/0039-6028(91)90072-Z ↗
6. Gurevich A B, Stefanov B B, Weldon M K, Chabal Y J and Raghavachari K 1998Phys. Rev. B58 R1343410.1103/PhysRevB.58.R13434 ↗
7. Hamers R J, Hovis J S, Coulter S K, Ellison M D and Padowitz D F 2000Jpn. J. Appl. Phys. 39 436610.1143/JJAP.39.4366 ↗
8. Ibach H, Wagner H and Bruchmann D 1982Solid State Com- mun. 42 45710.1016/0038-1098(82)90972-3 ↗
9. Ikeda H, Hotta K, Yamada T, Zaima S and Yasuda Y 1995Jpn. J. Appl. Phys. 34 219110.1143/JJAP.34.2191 ↗
10. Jones L A, Taylor G M, Wei F X and Thomas D F 1995Prog. Surf. Sci. 50 28310.1016/0079-6816(95)00062-3 ↗
11. Kobayashi Y, Sumitomo K, Prabhakaran K and Ogino T 1996J. Vac. Sci. Technol. A14 226310.1116/1.580058 ↗
12. Liu W K, Mokler S M, Ohtani N, Roberts C and Joyce B A 1992Surf. Sci. 264 30110.1016/0039-6028(92)90187-B ↗
13. Mawhinney D B, Glass Jr. J A and Yates Jr. J T 1997J. Phys. Chem. B101 120210.1021/jp963322r ↗
14. Noda H and Urisu T 2000Chem. Phys. Lett. 326 16310.1016/S0009-2614(00)00740-5 ↗
15. Ogata Y, Niki H, Sakka T and Iwasaki M 1995J. Electrochem. Soc. 142 159510.1149/1.2048619 ↗
16. Ranga Rao G, Wang Z H, Watanabe H, Aoyagi M and Urisu T 2004Surf. Sci. 570 17810.1016/j.susc.2004.07.039 ↗
17. Reddy R R K, Chadha A and Bhattacharya E 2001Biosensors Bioelectronics 16 31310.1016/S0956-5663(01)00129-4 ↗
18. Struck L Metal 1997Surf. Sci. 380 44410.1016/S0039-6028(97)00041-1 ↗
19. Tautz F S and Schaefer J A 1998J. Appl. Phys. 84 663610.1063/1.369038 ↗
20. Waltenburg H N and Yates Jr. J T 1995Chem. Rev. 95 158910.1021/cr00037a600 ↗
21. Wang Z H, Noda H, Nonogaki Y, Yabumoto N and Urisu T 2002Jpn. J. Appl. Phys. 41 427510.1143/JJAP.41.4275 ↗
22. Wang Z H, Urisu T, Nanbu S, Maki J, Ranga Rao G, Aoyagi M, Watanabe H and Ooi K 2004Phys. Rev. B69 4530910.1103/PhysRevB.69.045309 ↗
23. Weldon M K, Stefanov B B, Raghavachari K and Chabal Y J 1997Phys. Rev. Lett. 79 285110.1103/PhysRevLett.79.2851 ↗
24. Weldon M K, Queeney K T, Gurevich A B, Stefanov B B, Chabal Y J and Raghavachari K 2000J. Chem. Phys. 113 244010.1063/1.482061 ↗