journal article·2014-10

Comparative study of highly dense aluminium- and gallium-doped zinc oxide transparent conducting sol-gel thin films

Naji Al Dahoudi

Bulletin of Materials Science· Volume 37· Issue 6
Publisher page

Abstract

Transparent conducting aluminium- and gallium-doped zinc oxide (AZO and GZO) layers have been deposited by spin coating on glass substrates. The coatings have been sintered in air at 450 °C for 30 min and then post-annealed at 350 °C in a reducing atmosphere for 30 min. The electrical, optical and morphological properties of both coatings have been studied and compared. The conventional sols lead to very thin coating, typically 24 nm for a single layer of AZO and 32 nm of GZO with electrical resistivity of 0.72 and 0.35 Ω cm, respectively. The value however, drastically decreases down to a minimum of 2.6 × 10−2 Ω cm for AZO and 1.76 × 10−2 Ω cm for GZO, when five multilayer coatings are made. The origin of these differences is due to the different morphology of the coatings showing different electron scattering process. The GZO sol leads to denser smoother structure (porosity of 5%) layers with an average roughness of 2.76 A, while the AZO coating is formed by a more porous assembly (porosity of 20%) with an average roughness of 3.46 A. Both coatings exhibit high transparency (T > 85%) in the visible spectrum range with a slight shift of the absorption energy gap.
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OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications

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References (20)

Show source-provided references
1. Al Dahoudi N, Bisht H, Göbbert C, Krajweski T and Aegerter M 2001 Thin Solid Films 392 29910.1016/S0040-6090(01)01047-1 ↗
2. Augulis L, Serzentas S, Prosycevas I, Tamulevicius S and Zabarskas V 2005 Mater. Sci. 11 235
3. Berry J, Fortunato E, Medvedeva J and Shigesato Y 2011 MRS Proc. 1315
4. Choi S and Lee J 2001 J. Vac. Sci. Technol. A19 204310.1116/1.1371326 ↗
5. Coutts T J, Young D L and Li X 2000 MRS Symp. Proc. 623 19910.1557/PROC-623-199 ↗
6. Fernando S, Harris K, Gerein N and Brett M 2007 MRS Proc. 1056 4710.1557/PROC-1056-HH08-47 ↗
7. Furusaki T, Takahashi J and Kodira K 1994 J. Ceram. Soc. Jpn (Int. Ed.) 102 202
8. Godlewski M, Guziewicz E, Kopalko K, Luka G, Lukasiewicz M I, Krajewski T, Kwiatkowski B S and Gieratowska S 2011 Low Temp. Phys. 37 23510.1063/1.3570930 ↗
9. Goebbert C, Gasparro G, Schuler T, Krajewski T and Aegerter M 2000 J. Sol-Gel Sci. Technol. 19 43510.1023/A:1008747429862 ↗
10. Gong J, Zhang X, Pei Z, Sun C and Wen L 2011 J. Mater. Sci. Technol. 27393
11. Gordon R G 2000 MRS Bull. 25 5210.1557/mrs2000.151 ↗
12. Hartnagel H L, Dawar A L, Jain A K and Jagadish C 1995 Semiconducting transparent thin films (Bristol: Institute of Physics Publishing)
13. Hong R and Xu S 2010 J. Mater. Sci. Technol. 26 87210.1016/S1005-0302(10)60139-9 ↗
14. Lewis B G and Paine D C 2000 MRS Bull. 25 2210.1557/mrs2000.147 ↗
15. Musat V, Teixeira B, Fortunato E, Monteiro R C and Vilarinho P 2004 Surf. Coat. Technol. 180–181 65910.1016/j.surfcoat.2003.10.112 ↗
16. Ohyama M, Kozuka H and Yoko T 1998 J. Am. Ceram. Soc. 81 162210.1111/j.1151-2916.1998.tb02524.x ↗
17. Özgür Ü, Hofstetter D and Morkoc H 2010 Proc. IEEE 98 125510.1109/JPROC.2010.2044550 ↗
18. Texter J and Lelental M 1999 Langmuir 15 65410.1021/la980526l ↗
19. Van Bommel M J, Groen A, Van Hall H A M, Keur W C and Bernards T N M 1999 J. Mater. Sci. 34 480310.1023/A:1004699407930 ↗
20. Zhao Q, Xu X Y, Song X F, Zhang X Z, Yu D P, Li C P and Guo L 2006 Appl. Phys. Lett. 88 03310210.1063/1.2166483 ↗