Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3
Source abstract
Abstract
This work highlights some physical properties of Sb2O3 thin films obtained through heat treatment of Sb2S3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb2O3 thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · ZnO doping and properties · Gas Sensing Nanomaterials and Sensors
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