Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate

Thin films of silicon dioxide are deposited on ZnO/n-Si substrate at a low temperature using tetra-ethylorthosilicate (TEOS). The ZnO/n-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (Qbt) and fixed oxide charge density (Qf/q) of the SiO2/ZnO/n-Si films are found to be 3.9 × 1010 cm−2 and 1.048 × 1011 cm−2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler-Nordheim (F-N) constant current stressing.