Heavy lithium-doped ZnO thin films prepared by spray pyrolysis method
Source abstract
Abstract
Lithium-doped ZnO thin films (ZnO : Lix) were prepared by spray pyrolysis method on the glass substrates for x (x = [Li]/[Zn]) value varied between 5 and 70%. Structural, electrical and optical properties of the samples were studied by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, scanning electron microscopy (SEM), Hall effect and sheet resistance measurements. XRD results show that for x ≤ 50%, the structure of the films tends to be polycrystals of wurtzite structure with preferred direction along (0 0 2). The best crystalline order is found at x = 20% and the crystal structure is stable until x = 60%. The Hall effect results describe that Li doping leads to change in the conduction type from n- to p-type, again it changes to n-type at x = 70% and is attributed to self-compensation effect. Moreover, the carrier density was calculated in the order of 1013 cm−3. The resistivity of Li-doped films decreases until 22 Ω cm at x = 50%. Optical bandgap was reduced slightly, from 3.27 to 3.24 eV as a function of the grain size. Optical transmittance in the visible range reaches T = 97%, by increasing of Li content until x = 20%. Electrical and optical properties are coherent with structural results.
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Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. Ando K, Saito H, Jin Z, Fukumura T, Kawasaki M, Matsumoto Y and Koinuma H 2001 J. Appl. Phys. 89 728410.1063/1.1356035 ↗
2. Bagheri-Mohagheghi M M, Shahtahmasebi N, Alinejad M R, Youssefi A and Shokooh-Saremi M 2008 Phys. B: Condens. Matter 403 243110.1016/j.physb.2008.01.004 ↗
3. Bagheri-Mohagheghi M M, Shahtahmasebi N, Alinejad M R, Youssefi A and Shokooh-Saremi M 2009 Solid State Sci. 11 23310.1016/j.solidstatesciences.2008.05.005 ↗
4. Bin W, Yue Z, Jiahua M and Wenbin S 2009 Appl. Phys. A94 71510.1007/s00339-008-5028-7 ↗
5. Birgin E G, Chambouleyron I and Martinez J M 1999 J. Comput. Phys. 151 86210.1006/jcph.1999.6224 ↗
6. Bilgin V 2009 J. Electron. Mater. 38 196910.1007/s11664-009-0828-x ↗
7. Chen Y Q, Zheng X J, Mao S X and Li W 2010 J. Appl. Phys. 107 09430210.1063/1.3402937 ↗
8. Chu H, Wei L, Cui R, Wang J and Li Y 2010 Coordination Chem. Rev. 254 111710.1016/j.ccr.2010.02.009 ↗
9. Gal D, Hodes G, Lincot D and Schock H W 2000 Thin Solid Films 361 7910.1016/S0040-6090(99)00772-5 ↗
10. Jeong I S, Kim J H and Im S 2003 Appl. Phys. Lett. 83 294610.1063/1.1616663 ↗
11. Joint Committee on Powder Diffraction Standards, Powder Diffraction File, (Philadelphia, PA: ASTM, 1967). Card 0361451 (for ZnO hexagonal) and 40831 (for Zn hexagonal)
12. Kanai Y 1991a Jpn. J. Appl. Phys. 30 70310.1143/JJAP.30.703 ↗
13. Kanai Y 1991b Jpn. J. Appl. Phys. 30 202110.1143/JJAP.30.2021 ↗
14. Lee E C and Chang K J 2006 Phys. B: Condens. Matter 376 70710.1016/j.physb.2005.12.177 ↗
15. Lander J J 1960 J. Phys. Chem. Solids 15 32410.1016/0022-3697(60)90255-9 ↗
16. Lin W, Ma R, Shao W and Liu B 2007 Appl. Surf. Sci. 253 517910.1016/j.apsusc.2006.11.032 ↗
17. Look D C, Claflin B, Alivov Y I and Park S J 2004 Phys. Status Solidi (A) 201 220310.1002/pssa.200404803 ↗
18. Meyer B K, Stehr J, Hofstaetter A, Volbers N, Zeuner A and Sann J 2007 Appl. Phys. A88 11910.1007/s00339-007-3962-4 ↗
19. Mohamed G A, Abd El-Moiz A B and Rashad M 2005 Phys. B: Condens. Matter 370 15810.1016/j.physb.2005.09.006 ↗
20. Mohamed G A, Mohamed E M and Abu El-Fadl A 2001 Phys. B: Condens. Matter 308 94910.1016/S0921-4526(01)00884-5 ↗
21. Nayak P K, Jang J, Lee C and Hong Y 2009 Appl. Phys. Lett. 95 19350310.1063/1.3262956 ↗
22. Özgür U, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S and Morkoc H 2005 J. Appl. Phys. 98 04130110.1063/1.1992666 ↗
23. Sberveglieri G, Groppelli S, Nelli P, Quaranta F, Valentini A and Vasanelli L 1992 Sens. Actuators B: Chem. 7 74710.1016/0925-4005(92)80397-G ↗
24. Soki T T, Hatanaka Y and Look D C 2000 Appl. Phys. Lett. 76 325710.1063/1.126599 ↗
25. Studenikin S A, Golego N and Cocivera M 2000 J. Appl. Phys. 87 241310.1063/1.372194 ↗
26. Srikant V and Clarke D R 1998 J. Appl. Phys. 83 544710.1063/1.367375 ↗
27. Srikant V and Clarke D R 1997 J. Mater. Res. 12 142510.1557/JMR.1997.0193 ↗
28. Zeng Y J, Ye Z Z, Xu W Z, Chen L L, Li D Y, Zhu L P and Hu Y L 2005 J. Cryst. Growth 283 18010.1016/j.jcrysgro.2005.05.071 ↗
29. Zeng Y J, Ye Z Z, Xu W Z, Li D Y, Lu J G, Zhu L P and Zhao B H 2006 Appl. Phys. Lett. 88 2172743