Electrical properties of silver selenide thin films prepared by reactive evaporation
Source abstract
Abstract
The electrical properties of silver selenide thin films prepared by reactive evaporation have been studied. Samples show a polymorphic phase transition at a temperature of 403 ± 2 K. Hall effect study shows that it has a mobility of 2000 cm2V−1s−1 and carrier concentration of 1018 cm−3 at room temperature. The carriers are ofn-type. X-ray diffraction study indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to bea= 4.353 A,b= 6.929 A andc = 7.805 A.
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Research context
OpenAlex topics: Advanced Materials Characterization Techniques · Chalcogenide Semiconductor Thin Films · Surface and Thin Film Phenomena
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References (21)
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