Growth and characterization of indium antimonide and gallium antimonide crystals
Source abstract
Abstract
Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · GaN-based semiconductor devices and materials
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References (46)
Show source-provided references
1. Antonov P I, Bakholdin S I, Nosov Y G and Kalitina E S 1983Izv. Akad. Nauk SSSR 47 315
2. Benz K W and Muller G 1979J. Cryst. Growth 46 3510.1016/0022-0248(79)90105-2 ↗
3. Brezina B and Fousek J 1989Crystal growth in science and technology (eds) H Arend and J Hulliger (New York: Plenum)1A p. 18510.1007/978-1-4613-0549-1_10 ↗
4. Buzynin A N, Antonov V A, Osiko V V and Tatarintsev V M 1988Izv. Akad. Nauk SSSR 52 1889
5. Capasso F, Panish M B, Sumski S and Foy P W 1980Appl. Phys. Lett. 36 16510.1063/1.91417 ↗
6. Cockayne B, Steward V W, Brown G T, Mac Ewan W R and Young M L 1982J. Cryst. Growth 58 26710.1016/0022-0248(82)90235-4 ↗
7. de Oliveira C E M and de Carvalho M M G 1995J. Cryst. Growth 151 910.1016/0022-0248(95)00024-0 ↗
8. Dresselhaus G, Kip A F, Kittel C and Wagoner G 1955Phys. Rev. 98 55610.1103/PhysRev.98.556.2 ↗
9. Dutta P S, Rao K S R K, Bhat H L and Vikram Kumar 1995Appl. Phys. A61 14910.1007/BF01538381 ↗
10. Edwards J T and Layne G S 1959J. Opt. Soc. Am. 49 41410.1364/JOSA.49.000414 ↗
11. Egan R J, Chin V W L and Tansley T L 1994Semicond. Sci. Technol. 9 159110.1088/0268-1242/9/9/004 ↗
12. Etter D and Etter P J 1964J. Phys. Chem. Solids 25 45110.1016/0022-3697(64)90117-9 ↗
13. Grandsen M 1958Electrochemical Society Meeting, New York (Unpublished work)
14. Harsy M, Gorog T, Lendvay E and Koltai F 1981J. Cryst. Growth 53 23410.1016/0022-0248(81)90070-1 ↗
15. Hayakawa Y, Saitou Y, Sugimoto Y and Kumagawa M 1990J. Electron. Mater. 19 14510.1007/BF02651739 ↗
16. Heller M W and Hamerly R G 1985J. Appl. Phys. 57 462610.1063/1.335372 ↗
17. Helmer L, Schilz J, Bahr G and Kaysser W A 1995J. Cryst. Growth 154 266
18. Hildebrand O, Kuebart W, Benz K W and Philkuhn M H 1981IEEE J. Electron. QE-17 28410.1109/JQE.1981.1071068 ↗
19. Hrostowski H, Morin F J, Gebalk T H and Wheatley G H 1955Phys. Rev. 100 167210.1103/PhysRev.100.1672 ↗
20. Jakowetz W, Ruhle W, Breuninger K and Pilkuhn M 1972Phys. Status Solidi(a) 12 16910.1002/pssa.2210120117 ↗
21. Jamieson J C 1963Science 139 540
22. Kaiser R and Fan H Y 1965Phys. Rev. A138 15610.1103/PhysRev.138.A156 ↗
23. Keys R W 1954Phys. Rev. 99 49010.1103/PhysRev.99.490 ↗
24. Kondo S and Miyazawa S 1982J. Cryst. Growth 56 3910.1016/0022-0248(82)90010-0 ↗
25. Kozhemyakin G N 1995J. Cryst. Growth 149 26610.1016/0022-0248(94)00872-8 ↗
26. Lee H J and Woolley J C 1981Can. J. Phys. 59 184410.1139/p81-245 ↗
27. Lee M, Nicholas D J, Singer K E and Hamilton B 1986J. Appl. Phys. 59 289510.1063/1.336948 ↗
28. Milnes A G and Polyakov A Y 1993Solid State Electron. 36 80310.1016/0038-1101(93)90002-8 ↗
29. Moravec F 1993J. Cryst. Growth 128 45710.1016/0022-0248(93)90366-5 ↗
30. Motosugi G and Kagawa T 1980Jpn. J. Appl. Phys. 19 230310.1143/JJAP.19.2303 ↗
31. Muller G and Neumann G 1983J. Cryst. Growth 63 5810.1016/0022-0248(83)90427-X ↗
32. Munekata H, Mendez E E, Iye Y and Esaki L 1986Surf. Sci. 174 44910.1016/0039-6028(86)90451-6 ↗
33. Nagao Y, Hariu T and Shibata Y 1981IEE Trans. Electron Devices ED28 40710.1109/T-ED.1981.20355 ↗
34. Nicholas D J, Lee M, Hamilton B and Singer K E 1997J. Cryst. Growth 81 29810.1016/0022-0248(87)90408-8 ↗
35. Roy U N and Basu S 1990Bull. Mater. Sci. 13 2710.1007/BF02744853 ↗
36. Santos P V, Sood A K, Cardona M, Ploog K, Ohmori Y and Okamoto M 1988Phys. Rev. B37 638110.1103/PhysRevB.37.6381 ↗
37. Segawa K, Miki H, Otsubo M and Shirata K 1976Electron. Lett. 12 12410.1049/el:19760098 ↗
38. Sestakova V and Stepanek B 1995J. Cryst. Growth 146 8710.1016/0022-0248(94)00485-4 ↗
39. Stepanek B and Sestakova V 1992Thermochim. Acta 209 28510.1016/0040-6031(92)80206-C ↗
40. Stepanek B, Sestakova V, Hubik P, Smid V and Charvat V 1993J. Cryst. Growth 126 61710.1016/0022-0248(93)90812-B ↗
41. Swaminathan V and Macrander AT 1991Material aspects of Haas and InP based structures (Englewood Cliffs, NJ: Prentice Hall) Ch. 5
42. van Maaren M H 1966J. Phys. Chem. Solids 27 47210.1016/0022-3697(66)90056-4 ↗
43. van der Meulen Y J 1964Solid State Electron. 7 76710.1016/0038-1101(64)90036-X ↗
44. van Schilfgaarde M, Sher A and An-Ban Chen 1993Appl. Phys. Lett. 62 185710.1063/1.109523 ↗
45. van Welzenis R G and Ridley B K 1984Solid State Electron. 27 11310.1016/0038-1101(84)90101-1 ↗
46. Xie H, Piao J, Katz J and Wang W I 1991J. Appl. Phys. 70 315210.1063/1.349296 ↗