Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
Source abstract
Abstract
The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M′ and M″) and ac electrical conductivity (σ), dielectric constant (e′), dielectric loss (e″), loss tangent (tan δ) values were determined. The results of the dielectric properties of the Al/PCBM:ZnO/p-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/p-Si structures can be regarded as a candidate for organic diode applications.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Conducting polymers and applications · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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