Sol–gel deposited ceria thin films as gate dielectric for CMOS technology
Source abstract
Abstract
In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating technique and further characterized to study the various properties. Chemical composition of deposited films has been analysed by FTIR which shows existence of CeO2. The samples have been optically characterized using ellipsometry to find refractive index of 2·18 and physical thickness which is measured to be 5·56 nm. MOS capacitors were fabricated by depositing aluminum (Al) metal using the thermal evaporation technique on the top of CeO2 thin films. Capacitance–voltage measurement was carried out to calculate the dielectric constant, flat-band voltage shift of 18·92, 0·3–0·5 V, respectively and conductance–voltage study was carried out to determine the Dit of 1·40 × 1013 eV − 1 cm − 2 at 1 MHz.
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Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Diamond and Carbon-based Materials Research
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References (25)
Show source-provided references
1. Ami T and Suzuki M 1998 Mater. Sci. Eng. B54 8410.1016/S0921-5107(98)00133-0 ↗
2. Cheong K Y, Moon J H, Kim H J, Bahng W and Kim N-K 2008 J. Appl. Phys. 103 08411310.1063/1.2908870 ↗
3. Guha S and Narayanan V 2009 Annu. Rev. Mater. Res. 39 18110.1146/annurev-matsci-082908-145320 ↗
4. Gusev E P 2006 IBM J. Res. & Dev. 50 38710.1147/rd.504.0387 ↗
5. Gusev E P, Copel M, Cartier E, Baumvol I J R, Krug C and Gribelyuk M A 2000 Appl. Phys. Lett. 76 17610.1063/1.125694 ↗
6. Houssa M et al 2006 Mater. Sci. Eng. R51 3710.1016/j.mser.2006.04.001 ↗
7. Inoue T, Yamamoto Y, Koyama S, Suzuki S and Ueda Y 1990 Appl. Phys. Lett. 56 133210.1063/1.103202 ↗
8. Inoue T, Yamamoto Y and Satoh M 1999 Thin Solid Films 343 59410.1016/S0040-6090(99)00120-0 ↗
9. Joumori S, Nakajima K, Suzuki M, Kimura K, Nishikawa Y, Matsushita D, Amaguchi T and Satou N 2004 Jpn J. Appl. Phys. 43 788110.1143/JJAP.43.7881 ↗
10. Kang J F, Ziong G C, Lian G J and Han R Q 1998 Solid State Commun. 108 22510.1016/S0038-1098(98)00353-6 ↗
11. Karakaya K, Zinine A, van Berkum J G M, Verheijen M A, Rittersma Z M, Rijnders G and Blank D H A 2006 J. Electrochem. Soc. 153 F23310.1149/1.2266454 ↗
12. Lee B H, Kang L, Nieh R, Qi W J and Lee C J 2000 Appl. Phys. Lett. 76 192610.1063/1.126214 ↗
13. Lim W F, Cheong K Y and Lockman Z 2011 Appl. Phys. A103 106710.1007/s00339-010-6039-8 ↗
14. Oulachgar E H, Aktik C, Scarlete M, Dostie S, Sowerby R and Gujrathi S 2007 Appl. Phys. Lett. 101 084107
15. Quah H J, Cheong K Y, Hassan Z, Lockman Z, Jasni F A and Lim W F 2010 J. Electrochem. Soc. 157 H610.1149/1.3244214 ↗
16. Quah H J, Lim W F, Cheong K Y, Hassan Z and Lockman Z 2011 J. Crystal Growth 326 210.1016/j.jcrysgro.2011.01.040 ↗
17. Rathee D, Kumar M and Arya S K 2010 Int. J. Comp. Appl. 8 10
18. Wang S J, Xu S Y, You L P, Lim S L and Ong C K 2000 Semicond. Sci. Technol. 13 362
19. Wang L P, Tang B Y, Huang N, Tian X B and Chiu P K 2001 Mater. Sci. Eng. A308 17610.1016/S0921-5093(00)01991-2 ↗
20. Wei-Hao W, Tsui B-Y, Chen M-C, Hou Y-T, Jin Y and Jao H-J 2006 Appl. Phys. Lett. 89 16291110.1063/1.2364064 ↗
21. Wilk G D, Wallace R M and Anthony J M 2000 J. Appl. Phys. 87 48410.1063/1.371888 ↗
22. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 524310.1063/1.1361065 ↗
23. Xiang W F, Lu H B, Yan L, Guo H L and Yang G Z 2003 J. Appl. Phys. 93 53310.1063/1.1529096 ↗
24. Yu H Y, Li M F, Cho B J, Yeo C C, Joo M S, Zheng J Z and Ramanathan S 2002 Appl. Phys. Lett. 81 37610.1063/1.1492024 ↗
25. Zhong H C, Heuss G, Misra V, Luan H, Lee C and Kwong D L 2001 Appl. Phys. Lett. 78 113410.1063/1.1347402 ↗