Studies on preparation and characterization of indium doped zinc oxide films by chemical spray deposition
Source abstract
Abstract
The preparation of indium doped zinc oxide films is discussed. Variation of structural, electrical and optical properties of the films with zinc acetate concentration and indium concentration in the solution are investigated. XRD studies have shown a change in preferential orientation from (002) to (101) crystal plane with increase in indium dopant concentration. Films deposited at optimum conditions have a low resistivity of 1.33 x 10-4Ωm with 94% transmittance at 550 nm. SEM studies have shown smooth polycrystalline morphology of the films. Figure of merit is evaluated from electrical resistivity and transmittance data.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
Show source-provided references
1. Agashe C and Major S S 1996 inThin film characterization and applications (eds) K Narayanadass and D Mangalraj (New Delhi: Allied Publishers)
2. Arai I 1960J. Phys. Soc. Jpn 15 91610.1143/JPSJ.15.916 ↗
3. Barret C and Massalki T B 1980Structure of metals (Oxford: Pergamon)
4. Benny Joseph, Gopchandran K G, Manoj P K, Abraham J T, Peter Koshy and Vaidyan V K 1998Indian J. Phys. A72 99
5. Benny Joseph, Gopchandran K G, Thomas P V, Peter Koshy and Vaidyan V K 1999Mater. Chem. Phys. 58 7110.1016/S0254-0584(98)00257-0 ↗
6. Berggren K F and Sernelius B E 1981Phys. Rev. B24 197110.1103/PhysRevB.24.1971 ↗
7. Berhanu D, Boyle D S, Govender K and O’Brien P 2003J. Mater. Sci.: Mater. Elect. 14 579
8. Burstein E 1954Phys. Rev. 93 63810.1103/PhysRev.93.638 ↗
9. Chopra K L, Major S and Pandya D K 1983Thin Solid Films 102 110.1016/0040-6090(83)90256-0 ↗
10. Cossement D and Streydio J M 1985J. Cryst. Growth 72 5710.1016/0022-0248(85)90118-6 ↗
11. Goyal D J, Agashe C, Takwale M G, Marathe B R and Bhide B G 1992aJ. Mater. Sci. 27 470510.1007/BF01166010 ↗
12. Goyal D J, Agashe C, Takwale M G, Marathe B R and Bhide B G 1992bJ. Mater. Sci. Lett. 11 70810.1007/BF00728914 ↗
13. Jin Z C, Hamberg I and Granqvist C G 1988J. Appl. Phys. 64 511710.1063/1.342419 ↗
14. Krunks M and Mellikov E 1995Thin Solid Films 270 3310.1016/0040-6090(95)06893-7 ↗
15. Mahan G D 1980J. Appl. Phys. 51 263410.1063/1.327994 ↗
16. Messaoudi C, Sayah D and Abd-Lefdil M 1995Phys. Status Solidi (a) 151 9310.1002/pssa.2211510110 ↗
17. Moss T S 1954Proc. Phys. Soc. London. Ser. B67 77510.1088/0370-1301/67/10/306 ↗
18. Ohya Yutaka, Saiki Hisao, Tanaka Toshimasa and Takahashi Yasutaka 1996J. Am. Ceram. Soc. 79 82510.1111/j.1151-2916.1996.tb08512.x ↗
19. Roth A P and Williams D F 1981J. Electrochem. Soc. 128 268410.1149/1.2127329 ↗
20. Tolansky S 1948Multiple beam interferometry of surfaces and films (London: Oxford University Press)
21. Tiburcio-Silver A, Joubert J C and Labeau M 1991Thin Solid Films 197 19510.1016/0040-6090(91)90232-M ↗
22. Upadhyay J P, Vishwakarma S R and Prasad H C 1989Thin Solid Films 109 19510.1016/0040-6090(89)90701-3 ↗