journal article·2020-12

Some aspects of new Cu(NbC) films

Chon-Hsin Lin

Bulletin of Materials Science· Volume 43· Issue 1
Publisher page

Abstract

In this study, new barrier-free Cu(NbC) alloy films with two different thicknesses, i.e., 8 and 300 nm, containing 0.3 at% C and 0.5 at% Nb, which are deposited via co-sputtering on three types of substrates, viz., Si, stainless steel and polyimide (PI), have been developed, annealed, measured and analysed. The resistivity value of the new 300-nm-thick films atop Si substrates is $$3.07~\upmu \Omega ~\hbox {cm}$$ after annealing at $$450\circ \hbox {C}$$ for 200 h. The low resistivity and diffusion depth of the new films exhibit their good quality in anti-oxidation stability in a high-temperature environment. The films also display high-adhesive strength atop either stainless-steel or PI substrates, $${\sim }$$ 7–8 times greater than that of their pure-Cu counterparts. In sharp contrast, the antibacterial ratio of the new films is $${\sim }96\%$$ while that of their pure-Cu counterparts is 0%. In addition, the contact angles of Cu(NbC) films are greater than those of their pure-Cu counterparts, resulting in a far superior antibacterial efficacy for the new films to pure-Cu films against, for example, Staphylococcus aureus BCRC 10451. With these desirable merits, the new films seem to be a good candidate material for bacteria killing and prevention, reduction of legionella spread inside hospitals and / or large buildings, biological medical care systems and advanced surgical tools. The new films deposited on PI substrates also seem to be suitable for making supple electrically conductive parts or devices, such as flexible panels, keyboards, screens, smartphones embedded in smart textiles and so forth.
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Research context

OpenAlex topics: Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies · Semiconductor materials and devices

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References (24)

Show source-provided references
1. Grass G, Rensing C and Solioz M 2011 Appl. Environ. Microbiol.77 154110.1128/AEM.02766-10 ↗
2. Santo C E, Quaranta D and Grass G 2012 Microbiologyopen 1 4610.1002/mbo3.2 ↗
3. Rensing C and Grass G 2003 FEMS Microbiol. Rev.27 19710.1016/S0168-6445(03)00049-4 ↗
4. Franke S, Grass G, Rensing C and Nies D H 2003 J. Bacteriol. 185 380410.1128/JB.185.13.3804-3812.2003 ↗
5. Dupont C L, Grass G and Rensing C 2011 Metallomics3 110910.1039/c1mt00107h ↗
6. Singh Satish K, Grass G, Rensing C and Montfort William R 2004 J. Bacteriol.186 781510.1128/JB.186.22.7815-7817.2004 ↗
7. Mikolay A, Huggett S, Tikana L, Grass G, Braun J and Nies Dietrich H 2010 Appl. Microbiol. Biotechnol.87 187510.1007/s00253-010-2640-1 ↗
8. Santo C E, Lam E W, Elowsky Christian G, Quaranta D, Domaille Dylan W, Chang Christopher J et al 2011 Appl. Environ. Microbiol.77 79410.1128/AEM.01599-10 ↗
9. Liu Z, Stout J E, Tedesco L, Boldin M, Hwang C, Diven W F et al 1994 J. Infect. Dis.169 91910.1093/infdis/169.4.919 ↗
10. Kang S K, Shih D Y, Fogel K, Lauro P, Yim M J, Advocate G G et al 2002 IEEE Trans. Electron. Packag. Manuf.25 15510.1109/TEPM.2002.801165 ↗
11. Ho C E, Yang S C and Kao C R 2007 J. Mater. Sci.: Mater. Electron.18 155
12. Wang Y, Tang B-H and Li F-Y 2016 Vacuum126 5110.1016/j.vacuum.2016.01.019 ↗
13. Fei C, Wu G-H, Jiang L-T and Chen G-Q 2015 Vacuum122 12210.1016/j.vacuum.2015.09.011 ↗
14. Wang Y, Chen X, Ma W, Shang Y, Lei Z and Xiang F 2017 Appl. Surf. Sci.396 33310.1016/j.apsusc.2016.10.150 ↗
15. Lozano J G, Lozano-Perez S, Bogan J, Wang Y C, Brennan B, Nellist P D et al 2011 Appl. Phys. Lett.98 12311210.1063/1.3569146 ↗
16. Lin C-H 2015 Jpn. J. Appl. Phys.54 05ED0410.7567/JJAP.54.05ED04 ↗
17. Lin C-H 2017 Jpn. J. Appl. Phys.56 01AB0910.7567/JJAP.56.01AB09 ↗
18. Lin C-H 2016 Jpn. J. Appl. Phys.55 06JD0210.7567/JJAP.55.06JD02 ↗
19. http://thestockmarketwatch.com/metal/prices.aspx
20. ASTM D4541-02 2002 Vol. 06.1
21. Jis Z 2801 Test method
22. Rossnage S M and Kuan T S 2004 J. Vac. Sci. Technol. B22 24010.1116/1.1642639 ↗
23. Barmak K, Cabral C Jr, Rodbell K P and Harper J M E 2006 J. Vac. Sci. Technol. B24 248510.1116/1.2357744 ↗
24. Chu J P, Lin C H and John V S 2007 Appl. Phys. Lett.91 13210910.1063/1.2790843 ↗