Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering
Source abstract
Abstract
Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail. Optimized ZnO : Al films have conductivity of 2200 S cm-1 and average transmission in the visible range is higher than 85%. The conductivity and mobility show very little temperature dependence.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
Show source-provided references
1. Addonizo M L, Antonaia A, Cantele G and Privato C 1999Thin Solid Films 349 9310.1016/S0040-6090(99)00186-8 ↗
2. Chang J F, Wang H L and Hon M H 2000J. Cryst. Growth 211 9310.1016/S0022-0248(99)00779-4 ↗
3. Chopra K L, Major S and Pandaya D K 1983Thin Solid Films 102 110.1016/0040-6090(83)90256-0 ↗
4. Hu J and Gordan R G 1992J. Appl. Phys. 72 538110.1063/1.351977 ↗
5. Joseph M, Tabata H and Kawa T 1999Jpn J. Appl. Phys. A11 L120510.1143/JJAP.38.L1205 ↗
6. Kim Het al 2000Appl. Phys. Lett. 76 25910.1063/1.125740 ↗
7. Ma Jin, Ji Feng, De-Heng Z, Ma Hong-Li and Li Shu-Ying 1999Thin Solid Films 357 9810.1016/S0040-6090(99)00357-0 ↗
8. Minegishi K, Kikuchi Y and Yano K 1997Jpn J. Appl. Phys. 36 L145310.1143/JJAP.36.L1453 ↗
9. Reddy K T R, Gopalaswamy H, Reddy P J and Miles R W 2000J. Cryst. Growth 210 51610.1016/S0022-0248(99)00868-4 ↗
10. Roth A P, Webb J B and Williams D F 1982Phys. Rev. B25 783610.1103/PhysRevB.25.7836 ↗
11. Ryu Y R, Zhu S, Look D C, Wrobel J M, Amjeony and White H W 2000J. Cryst. Growth 216 33010.1016/S0022-0248(00)00437-1 ↗
12. Sato H, Minami T, Takata S, Miyata T and Ishii M 1993Thin Solid Films 236 1410.1016/0040-6090(93)90634-2 ↗
13. Sernelius B E, Berggren K F, Jin Z C, Hamberg I and Granqvist C 1988Phys. Rev. B37 1024410.1103/PhysRevB.37.10244 ↗
14. Wang R, King L H and Sleight A W 1996J. Mater. Res. 11 165910.1557/JMR.1996.0208 ↗
15. Yamamoto T and Yoshida H 1999Jpn J. Appl. Phys. B2 L1453
16. Zhu S, Su C H, Lehouzky S L, Peters P and George M A 2000J. Cryst. Growth 211 10610.1016/S0022-0248(99)00798-8 ↗