Band structure, photoelectric properties, and electronic transition mechanism of CuGa1-xTixS2 compound synthesized by solid-state reaction sintering method
Source abstract
Abstract
As the optical absorption layer of solar cells, the intermediate band materials can extend the absorption spectrum. In this paper, an intermediate band material of CuGa1-xTixS2 compound is fabricated by a solid-state reaction sintering method. The CuGa1-xTixS2 compound shows a single-phase chalcopyrite structure. Partial replacement of Ga by Ti atoms introduces a narrow partially filled intermediate band, and two additional optical absorption edges located at 682 and 1075 nm. The carrier concentration of CuGa1-xTixS2 compound increases with the increase of Ti doping content, while the resistivity and mobility are decreased. The Fermi level passes through the intermediate band from the band structures of the samples. The presence of intermediate band leads to the increase of photo-induced carriers and the CuGa1-xTixS2 compound as an optical absorption layer material can be used as a candidate for high-efficiency solar cells. The half-filled state and electronic transition mechanism are revealed from the band structure based on optical absorption
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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