journal article·2019-01

Reaction Within Ni/Sn/Cu Microjoints for Chip-Stacking Applications

Y. W. Wang, W. L. Shih, H. T. Hung, C. R. Kao

Journal of Electronic Materials· Volume 48· Issue 1
Publisher page

Abstract

The reaction within Ni/Sn/Cu microjoints has been investigated with a 10 μm initial thickness of Sn so that Sn was quickly consumed in the early stage of the reaction, transforming the joints into full intermetallic joints. Accordingly, the emphasis of the present study is on the materials interactions in such full intermetallic joints. Ni/Sn/Cu sandwiches were prepared by thermal compression bonding. High-temperature storage tests were conducted at 150°C, 180°C, and 200°C for different time periods. The hardness and Young’s modulus of the intermetallic joints were measured using nanoindentation. The key finding of this study is that, once Sn was exhausted, the originally planar (Cu,Ni)3Sn grew preferably along the grain boundary of (Cu,Ni)6Sn5, creating a highly nonuniform (Cu,Ni)3Sn growth front. Both the hardness and elastic modulus increased with the Ni concentration in the intermetallics.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Advanced Welding Techniques Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (19)

Show source-provided references
1. K.N. Tu and K. Zeng, Mater. Sci. Eng. R34, 1 (2001).10.1016/S0927-796X(01)00029-8 ↗
2. T. Laurila, V. Vuorinen, and J.K. Kivilahti, Mater. Sci. Eng. R49, 1 (2005).10.1016/j.mser.2005.03.001 ↗
3. C.E. Ho, S.C. Yang, and C.R. Kao, J. Mater. Sci. 18, 155 (2007).
4. T. Laurila and V. Vuorinen, Materials 2, 1796 (2009).10.3390/ma2041796 ↗
5. H.Y. Chuang, T.L. Yang, M.S. Kuo, Y.J. Chen, J.J. Yu, C.C. Li, C.R. Kao, and I.E.E.E. Trans, Device Mater. Reliab. 12, 233 (2012).10.1109/TDMR.2012.2185239 ↗
6. T.L. Yang, J.J. Yu, W.L. Shih, C.H. Hsueh, and C.R. Kao, J. Alloys Compd. 605, 193 (2014).10.1016/j.jallcom.2014.03.165 ↗
7. C.C. Li, C.K. Chung, W.L. Shih, and C.R. Kao, Metall. Mater. Trans. A 45A, 2343 (2014).10.1007/s11661-014-2263-8 ↗
8. N. Saunders and A.P. Miodownik, Bull. Alloy Phase Diagr. 11, 278 (1990).10.1007/BF03029299 ↗
9. K. Nogita, S.D. McDonald, H. Tsukamoto, J. Read, S. Suenaga, and T. Nishimura, Trans. Jpn. Inst. Electron. Packag. 2, 46 (2009).10.5104/jiepeng.2.46 ↗
10. C.W. Chang, S.C. Yang, C.T. Tu, and C.R. Kao, J. Electron. Mater. 36, 1455 (2007).10.1007/s11664-007-0235-0 ↗
11. K.K. Hong, J.B. Ryu, C.Y. Park, and J.Y. Huh, J. Electron. Mater. 37, 61 (2008).10.1007/s11664-007-0283-5 ↗
12. Y. Zhong, M.L. Huang, H. Ma, W. Dong, Y. Wang, and N. Zhao, J. Mater. Res. 31, 609 (2016).10.1557/jmr.2016.45 ↗
13. Y.W. Wang, Y.W. Lin, and C.R. Kao, J. Alloys Compd. 493, 233 (2010).10.1016/j.jallcom.2009.12.062 ↗
14. K. Zeng, R. Stierman, T.C. Chiu, D. Edwards, K. Ano, and K.N. Tu, J. Appl. Phys. 97, 024508 (2005).10.1063/1.1839637 ↗
15. T.C. Chiu, K. Zeng, R. Stierman, D. Edwards, K. Ano, in Electronic Components and Technology Conference (2004), pp. 1256–1262.
16. Y.W. Wang, Y.W. Lin, and C.R. Kao, Microelectron. Reliab. 49, 248 (2009).10.1016/j.microrel.2008.09.010 ↗
17. H. Tsukamoto, Z. Dong, H. Hung, T. Nishimura, and K. Nogita, Mater. Sci. Eng. B 164, 44 (2009).10.1016/j.mseb.2009.06.013 ↗
18. K. Nogita, D. Mu, S.D. McDonald, J. Read, and Y.Q. Wu, Intermetallics 26, 78 (2012).10.1016/j.intermet.2012.03.047 ↗
19. S.W. Fu, C.Y. Yu, T.K. Lee, K.C. Liu, and J.G. Duh, Mater. Lett. 80, 103 (2012).10.1016/j.matlet.2012.04.099 ↗