journal article·1976-06

A dislocation etchant for {100} gallium phosphide

T. J. Hayes, A. Rasul, S. M. Davidson

Journal of Electronic Materials· Volume 5· Issue 3
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and interfaces · Ion-surface interactions and analysis · Nanowire Synthesis and Applications

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References (9)

Show source-provided references
1. See for example, T. Iizuka, J.Electrochem.Soc.118, 1190, (1971).10.1149/1.2408278 ↗
2. R.C. Clarke, D.S. Robertson and A.W. Vere, J.Mat.Sci.8, 1349, (1974).10.1007/BF00549351 ↗
3. A. Mottram and A.R. Peaker, J.Cryst. Growth27, 193, (1974)
4. T.J. Hayes, A. Mottram and A.R. Peaker (To be published).
5. S.M. Davidson, M.Z. Iqbal and D.C. Northrop, Phys.Stat. Sol.29, 571, (1975).10.1002/pssa.2210290227 ↗
6. J.W. Faust Jr. and A. Sagar, J.Appl.Phys.31., 331, (1960).10.1063/1.1735567 ↗
7. J. Titchmarsh, R. Bucker, W. Harding and D.R. Wight (Private Communication).
8. G.A. Rozgonyi and T. Iizuka, J.Electrochem.Soc.120, 673, (1973).10.1149/1.2403532 ↗
9. T. Suzuki and Y. Matsumoto, Appl.Phys.Lett.26, 431, (1975).10.1063/1.88226 ↗