Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes
Source abstract
Abstract
Silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS) with ammonium sulfide [(NH4)2S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ∼10 μm. SiO2 did not show significant improvement and the zero-bias resistance-area product (R0A) was 0.72 Ω-cm2 at 77 K. SixNy passivation showed a nominal improvement with an R0A value of 4.1 Ω-cm2 at 77 K. ZnS with (NH4)2S treatment outperformed others significantly, improving the R0A value to 492 Ω-cm2 at 77 K. Variable-area diode measurements indicated a bulk-limited R0A value of 722 Ω-cm2. ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Radiation Detection and Scintillator Technologies
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References (11)
Show source-provided references
1. G. Sai-Halasz, R. Tsu, and L. Esaki, Appl. Phys. Lett. 30, 651 (1971)doi: 10.1063/1.89273 .10.1063/1.89273 ↗
2. C. H. Grein, P. M. Young, and H. Ehrenreich, Appl. Phys. Lett,. 61, 2905 (1992).doi: 10.1063/1.108480 .10.1063/1.108480 ↗
3. E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, C. H. Grein, P.M. Young, H. Ehrenreich, R. H.Miles, and D. H. Chow, Appl. Phys. Lett., 64, 3160 (1994).doi: 10.1063/1.111325 .10.1063/1.111325 ↗
4. D.L. Smith and C. Mailhiot, J. Appl. Phys., 62, 2545 (1987).doi: 10.1063/1.339468 .10.1063/1.339468 ↗
5. A. Gin, Y. Wei, J. Bae, A. Hood, J. Nah and M. Razeghi, Thin Solid Films, 447-448, 489 (2004).doi: 10.1016/j.tsf.2003.09.002 .10.1016/j.tsf.2003.09.002 ↗
6. A. Hood, P. Y. Delaunay, D. Hoffman, B. M. Nguyen, Y. Wei, M. Razeghi and V. Nathan, Appl. Phys. Lett, 90, 233513 (2007).doi: 10.1063/1.2747172 .10.1063/1.2747172 ↗
7. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi and M. Tidrow, Appl. Phys. Lett, 84, 2037 (2004).doi: 10.1063/1.1686894 .10.1063/1.1686894 ↗
8. S. Mallick, S. Ghosh, J.B. Rodriguez, and S. Krishna, TMS Electronic Material Conference (2007)
9. S. Mallick, K. Banerjee, S. Ghosh, J.B. Rodriguez, and S.␣Krishna, IEEE LEOS Annual Meeting (2007)
10. S.H. Lee, S.H. Bae, H.C. Lee, and C.K. Kim, J. Electron. Mater. 27, 684 (1998).doi: 10.1007/s11664-998-0036-0 .10.1007/s11664-998-0036-0 ↗
11. V. N. Bessolov, E. V. Konenkova, and M. V. Lebedev, Mater. Sci. Eng., B 44, 376 (1997). 10.1016/S0921-5107(96)01816-8 .10.1016/S0921-5107(96)01816-8 ↗