Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation
Source abstract
Abstract
The low-field electron mobility in bulk ZnO has been the object of extensive experimental studies, mainly through measurement of the temperature-dependent Hall effect. In this work, we reassess the experimental results through direct simulations of Hall measurements, performed with a Monte Carlo transport model and taking into account all the major scattering mechanisms. The deformation potentials required to compute acoustic and optical phonon scattering are derived from first-principles computations, and an original theory for charged-dislocation-line scattering is proposed and implemented. Monte Carlo results for the electron mobility and the Hall factor are compared with analytical expressions derived with the relaxation-time approximation, which is found to be adequate at low temperatures where inelastic scattering effects due to optical phonons are negligible.
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Research context
OpenAlex topics: ZnO doping and properties · Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (51)
Show source-provided references
1. V.A. Karpina, V.I. Lazorenko, C.V. Lashkarev, V.D. Dobrowolski, L.I. Kopylova, V.A. Baturin, S.A. Pustovoytov, A.J. Karpenko, S. A. Eremin, P. M. Lytvyn, V.P. Ovsyannikov, and E.A. Mazurenko, Cryst. Res. Technol. 39, 980 (2004).10.1002/crat.200310283 ↗
2. D.C. Look, B. Claflin, Y.I. Alivov, and S.J. Park, Phys. Status Solid. A 201, 2203 (2004).10.1002/pssa.200404803 ↗
3. Ü. ÖzgÜr, Y.I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301(103) (2005).10.1063/1.1992666 ↗
4. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, and T. Steiner, Prog. Mater. Sci. 50, 293 (2005).10.1016/j.pmatsci.2004.04.001 ↗
5. S. Sasa, T. Hayafuji, M. Kawasaki, A. Nakashima, K. Koike, M. Yano, and M. Inoue, Phys. Status Solid. C 5, 115 (2008).10.1002/pssc.200776575 ↗
6. D.C. Look, D.C. Reynolds, J.R. Sizelove, R.L. Jones, C.W. Litton, G. Cantwell, and W.C. Harsch, Solid State Commun. 105, 339 (1998).10.1016/S0038-1098(97)10056-4 ↗
7. D.L. Rode, Semiconductors and Semimetals, ed. R.K. Willardson and A.C. Beer, Vol. 10, Chap. 1 (New York: Academic Press, 1975), pp. 1–89.
8. A.R. Hutson, Phys. Rev. 108, 222 (1957).10.1103/PhysRev.108.222 ↗
9. O. Schmidt, A. Geis, P. Kiesel, C.G. Van de Walle, N.M. Johnson, A. Bakin, A. Waag, and G.H. Döhler, Superlattices. Microstruct. 39, 8 (2006).10.1016/j.spmi.2005.08.056 ↗
10. C. Tavares Chevalier, J. Rothman, and G. Feuillet, Materials Research Society Symposium Proceedings, ed. D.P. Norton, C. Jagadish, I. Buyanova, and G.-C. Yi, Vol. 1035 (MRS, 2007)10.1557/PROC-1035-L04-06 ↗
11. D.L. Young, T.J. Coutts, V.I. Kaydanov, A.S. Gilmore, and W.P. Mulligan, J. Vac. Sci. Technol. A 18, 2978 (2000).10.1116/1.1290372 ↗
12. E. M. Kaidashev, M. Lorenz, H. vonWenckstern, A. Rahm, H.-C. Semmelhack, K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 82, 3901 (2003).10.1063/1.1578694 ↗
13. T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Appl. Phys. Lett. 87, 022101(3) (2005).10.1063/1.1991994 ↗
14. J.D. Albrecht, P.P. Ruden, S. Limpijumnong, W.R.L. Lambrecht, and K.F. Brennan, J. Appl. Phys. 86, 6864 (1999).10.1063/1.371764 ↗
15. B. Guo, A. Ravaioli, and M. Staedele, Comput. Phys. Comm. 175, 482 (2006).10.1016/j.cpc.2006.06.008 ↗
16. F. Bertazzi, M. Goano, E. Bellotti, J. Electron. Mater. 36, 857 (2007).10.1007/s11664-007-0111-y ↗
17. E. Furno, F. Bertazzi, M. Goano, G. Ghione, and E. Bellotti, Solid State Electron. 52, 1796 (2008).10.1016/j.sse.2008.08.001 ↗
18. B.R. Nag, Theory of Electrical Transport in Semiconductors (Oxford: Pergamon Press, 1972).
19. W. Lambrecht, A.V. Rodina, S. Limpijumnong, B. Segall, and B.K. Meyer, Phys. Rev. B 65, 075207(12) (2002).10.1103/PhysRevB.65.075207 ↗
20. M. Goano, F. Bertazzi, M. Penna, and E. Bellotti, J. Appl. Phys. 102, 083709(11) (2007).10.1063/1.2794380 ↗
21. H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara, and H. Takasu, J. Appl. Phys. 84, 4412 (2004).
22. D.C. Look, H. L. Mosbacker, Y.M. Strzhemechny, and L. J. Brillson, Superlattices. Microstruct. 38, 406 (2005).10.1016/j.spmi.2005.08.013 ↗
23. E. Müller, D. Gerthsen, P. Brückner, F. Scholz, C. Kirchner, and A. Waag, Mater. Sci. Semicond. Process. 9, 127 (2006).10.1016/j.mssp.2006.01.047 ↗
24. D.C. Look and J.R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999).10.1103/PhysRevLett.82.1237 ↗
25. B.C. Lee, K.W. Kim, M. Dutta, and M.A. Stroscio, Phys. Rev. B 56, 997 (1997).10.1103/PhysRevB.56.997 ↗
26. B.K. Ridley, Quantum Processes in Semiconductors, 4th edn., (Oxford: Clarendon Press, 1999).
27. J.R. Meyer and F.J. Bartoli, Phys. Rev. B 23, 5413 (1981).10.1103/PhysRevB.23.5413 ↗
28. M.V. Fischetti and J.M. Higman, Monte Carlo Device Simulation: Full Band and Beyond, ed. K. Hess, Chap. 5 (Boston: Kluwer Academic Publishers, 1991), pp. 123–160.10.1007/978-1-4615-4026-7_5 ↗
29. S. Zollner, S. Gopalan, and M. Cardona, Appl. Phys. Lett. 54, 614 (1989).10.1063/1.100895 ↗
30. S. Zollner, S. Gopalan, and M. Cardona, J. Appl. Phys. 68, 1682 (1990).10.1063/1.346622 ↗
31. X. Gonze and C. Lee, Phys. Rev. B 55, 10355 (1997).10.1103/PhysRevB.55.10355 ↗
32. S. Baroni, S.S. de Gironcoli, and A. Dal Corso, Rev. Mod. Phys. 73, 515 (2001).10.1103/RevModPhys.73.515 ↗
33. X. Gonze, J.-M. Beuken, R. Caracas, F. Detraux, M. Fuchs, G.-M. Rignanese, L. Sindic, M. Verstraete, G. Zerah, F. Jollet, M. Torrent, A. Roy, M. Mikami, Ph. Ghosez, J.-Y. Raty, and D.C. Allan Compute. Mater. Sci. 25, 478 (2002).10.1016/S0927-0256(02)00325-7 ↗
34. X. Gonze, G.-M. Rignanese, M. Verstraete, J.-M. Beuken, Y. Pouillon, R. Caracas, F. Jollet, M. Torrent, G. Zerah, M. Mikami, Ph. Ghosez, M. Veithen, J.-Y. Raty, V. Olevano, F. Bruneval, L. Reining, R. Godby, G. Onida, D.R. Hamann, D.C. Allan et al., Z. Kristallogr. 220, 558 (2005).10.1524/zkri.220.5.558.65066 ↗
35. The ABINIT code is a common project of the Université Catholique de Louvain, Corning Inc., and other contributors (URL http://www.abinit.org ).
36. J. Serrano, A.H. Romero, F.J. Manjòn, R. Lauck, M. Cardona, and A. Rubio, Phys. Rev. B 69, 094306(14) (2004).
37. V.L. Bonch-Bruevich and V.B. Glasko, Sov. Phys. Solid State 3, 26 (1961).
38. E.M. Kuznetsova, Sov. Phys. Solid State 3, 1446 (1962).
39. B. Pödör, Phys. Status Solid. 16, K167 (1966).10.1002/pssb.19660160264 ↗
40. J.R. Meyer and F. J. Bartoli, Phys. Rev. B 24, 2089 (1981).10.1103/PhysRevB.24.2089 ↗
41. J.D. Albrecht, P.P. Ruden, E. Bellotti, and K.F. Brennan, MRS Internet J. Nitride Semicond. Res. 4S1, G6.6 (1999).10.1557/S1092578300003069 ↗
42. C. Erginsoy, Phys. Rev. 79, 1013 (1950).10.1103/PhysRev.79.1013 ↗
43. H.S.W. Massey and B.L. Moiseiwitsch, Phys. Rev. 78, 180 (1950).10.1103/PhysRev.78.180 ↗
44. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Computational Microelectronics) (Wien: Springer, 1989)10.1007/978-3-7091-6963-6 ↗
45. A. Boardman, W. Fawcett, and J. Ruch, Phys. Status Solid. A 4, 133 (1971).10.1002/pssa.2210040114 ↗
46. P. Warmenbol, F.M. Peeters, and J.T. Devreese, Phys. Rev. B 33, 1213 (1986).10.1103/PhysRevB.33.1213 ↗
47. F. Ciccarello and M. Zarcone, J. Appl. Phys. 99, 113702(6) (2006).10.1063/1.2201694 ↗
48. J.E. Dijkstra and W.T. Wenckebach, Appl. Phys. Lett. 70, 2428 (1997).10.1063/1.118892 ↗
49. D.C. Look, Mater. Sci. Eng. B 80, 383 (2001).10.1016/S0921-5107(00)00604-8 ↗
50. C. Hamaguchi, Basic Semiconductor Physics (Berlin: Springer, 2001).10.1007/978-3-662-04656-2 ↗
51. J. Narayan, K. Dovidenko, A.K. Sharma, and S. Oktyabrsky, J. Appl. Phys. 84, 2597 (1998).10.1063/1.368440 ↗