Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics
Source abstract
Abstract
The influences of Bi2O3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 950°C to 1,100°C. The sintering temperature of ZnO-TiO2 ceramics with Bi2O3 addition could be effectively reduced to 1,000°C due to the liquidphase effects resulting from the additives. A proper amount of Bi2O3 addition could effectively improve the densification and dielectric properties of ZnO-TiO2 ceramics. The temperature coefficient of resonant frequency could be controlled by varying the sintering temperature and lead to a zero τf value. At 1,000°C, 1ZnO-1TiO2 ceramics with 1 wt.% addition gave better microwave dielectric properties ɛr of 29.3, a Q × f value of 22,000 GHz at 8.36 GHz, and a τf value of +17.4 ppm/ °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. T. Negas, G. Yeager, S. Bell, N. Coat, and I. Minis, Am. Ceram. Soc. Bull. 72, 80 (1993).
2. W.S. Kim, T.H. Kim, E.S. Kim, and K.H. Yoon, Jpn. J. Appl. Phys. 37, 5367 (1998).10.1143/JJAP.37.5367 ↗
3. I.T. Kim, Y.H. Kim, and S.J. Chung, J. Mater. Res. 12, 518 (1997).10.1557/JMR.1997.0074 ↗
4. C.L. Huang, M.H. Weng, T.K. Lin, and L. Wu, Mater. Res. Bull. 35, 1469 (2000).10.1016/S0025-5408(00)00356-1 ↗
5. C.L. Huang, M.H. Weng, C.C. Lion, and C.C. Wu, Mater. Res. Bull, 35, 2445 (2000).10.1016/S0025-5408(00)00432-3 ↗
6. T. Takada, S.F. Wang, S. Yoshikawa, S.J. Jang, and R.E. Newnham, J. Am. Ceram. Soc. 77, 1909 (1994).10.1111/j.1151-2916.1994.tb07070.x ↗
7. S.I. Hirano, T. Hayashi, and A. Hattor, J. Am. Ceram. Soc. 74, 1320 (1991).10.1111/j.1151-2916.1991.tb04105.x ↗
8. H. Kagata, T. Inoue, J. Kato, and I. Kameyama, Jpn. J. Appl. Phys. 31, 3152 (1992).10.1143/JJAP.31.3152 ↗
9. H.T. Kim, S. Nahm, J.D. Byum, and Y. Kim, J. Am. Ceram. Soc. 82, 3043 (1999).10.1111/j.1151-2916.1999.tb02200.x ↗
10. H.T. Kim, J.D. Byum, and Y. Kim, Mater. Res. Bull. 33, 975 (1998).10.1016/S0025-5408(98)00057-9 ↗
11. H.T. Kim, S. Nahm, J.D. Byum, and Y. Kim, J. Am. Ceram. Soc. 82, 3476 (1999).10.1111/j.1151-2916.1999.tb02268.x ↗
12. H.T. Kim, J.D. Byum, and Y. Kim, Mater. Res. Bull. 33, 963 (1998).10.1016/S0025-5408(98)00056-7 ↗
13. B.W. Hakki and P.D. Coleman, IRE Trans. Microwave Theory Technol. MTT-8, 402 (1960).10.1109/TMTT.1960.1124749 ↗
14. W.E. Courtney, IEEE Trans. Microwave Theory Technol. MTT-18, 476 (1970).10.1109/TMTT.1970.1127271 ↗
15. R.D. Shannon and C.D. Prewitt, Acta Cryst. B25, 925 (1969).10.1107/S0567740869003220 ↗
16. M. Valant, D. Suvorov, and D. Kolar, J. Mater. Res. 11, 928 (1996).10.1557/JMR.1996.0116 ↗
17. W. Werisng, Electronic Ceramics, ed. B.C.H. Steele (London: Elsevier Applied Science, 1991), pp. 67–101.
18. C.L. Huang, M.H. Weng, and H.L. Chen, Mater. Chem. Phys. 71, 17 (2001).10.1016/S0254-0584(00)00528-9 ↗