InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices
Source abstract
Abstract
Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting at 1.3µm at 300 K have been studied. The energy distribution of excitons remains an nonequilibrium one up to room temperature due to high localization energies in these QDs. Carrier relaxation is found to proceed mainly via multiphonon processes. The luminescence emission from QDs in a microcavity exhibits a large spectral splitting of TE and TM components as observed in angle-resolved measurements amounting up to 10 nm for an angle of incidence of 30°. A 1.3 µm vertical cavity enhanced QD photodetector based on a single sheet of QDs is shown to have a quantum efficiency >10%. The ground state electroluminescence of a quantum dot resonant cavity light emitting diode shows no saturation up to 2 kAcm−2.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Quantum Dots Synthesis And Properties
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References (34)
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