journal article·1998-04

Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

T. Kimoto, O. Takemura, H. Matsunami, T. Nakata, M. Inoue

Journal of Electronic Materials· Volume 27· Issue 4
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Abstract

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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and interfaces · Semiconductor materials and devices

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References (19)

Show source-provided references
1. A. Schöner, N. Nordell, K. Rottner, R. Helbig and G. Pensl, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys., 1996), p. 493.
2. W. Suttrop, G. Pensl and P. Lanig, Appl. Phys. A 51, 231 (1990).10.1007/BF00324007 ↗
3. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer and J.J. Kopanski, Appl. Phys. Lett. 63, 1206 (1993).10.1063/1.109772 ↗
4. M.V. Rao, P. Griffiths, O.W. Holland, G. Kelner, J.A. Freitas, Jr., D.S. Simons, P.H. Chi and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).10.1063/1.358776 ↗
5. G. Pensl, V.V. Afanas’ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maier and W.J. Choyke, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys., 1996), p. 275.
6. D. Kawase, T. Ohno, T. Iwasaki and T. Yatsuo, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys., 1996), p. 513.
7. K. Hölzlein, H. Mitlehner, R. Rupp, R. Stein, D. Peters, J. Völkl and D. Stephani, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys., 1996), p. 561.
8. N. Ramungul, V. Khemka, R. Tyagi, T.P. Chow, M. Ghezzo, P.G. Neudeck, J. Kretchmer, W. Hennessy and D.M. Brown, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys., 1996), p. 713.
9. P.M. Shenoy and B.J. Baliga, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys. 1996), p. 717.
10. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata and M. Watanabe, J. Electron. Mater. 25, 879 (1996).10.1007/BF02666653 ↗
11. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H.P. Strunk and M. Maier, physica status solidi 162, 277 (1997).10.1002/1521-396X(199707)162:1<277::AID-PSSA277>3.0.CO;2-C ↗
12. K. Rottner, A. Schöner, M. Frischholz, J.O. Svedberg, U. Gustafsson, A. Ellison, E. Janzén and O. Kordina, presented at Intl. Conf. on Silicon Carbide, III-Nitrides and Related Materials, 1997, Stockholm, 1997, Tu2b-3.
13. T. Kimoto, A. Itoh and H. Matsunami, physica status solidi, 202, 247 (1997).10.1002/1521-3951(199707)202:1<247::AID-PSSB247>3.0.CO;2-Q ↗
14. Yu.A. Vodakov and E.N. Mokhov, Silicon Carbide 1973 (Columbia: University of South Carolina Press, 1974), p. 508.
15. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schöner and N. Nordell, physica status solidi 162, 199 (1997).10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0 ↗
16. S.M. Sze, Physics of Semiconductor Devices (New York: Wiley-Interscience, 1985), Chap. 2.
17. T. Kimoto, N. Inoue and H. Matsunami, physica status solidi 162, 263 (1997).10.1002/1521-396X(199707)162:1<263::AID-PSSA263>3.0.CO;2-W ↗
18. P.G. Neudeck, presented at 1997 Electronic Materials Conf., Colorado, 1997, M1.
19. H. Itoh, T. Troffer and G. Pensl, presented at Intl. Conf. on Silicon Carbide, III-Nitrides and Related Materials — 1997, Stockholm, 1997, ThP-32.