Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy
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OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (10)
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1. M. Bhatnagar and J. Baliga, IEEE Trans. Electron Dev. 40, 645 (1993).10.1109/16.199372 ↗
2. Yu. A.Vodakov and E.N. Mokhov, SiC-1973, ed. R. C.Marshall, J.W. Faust, Jr. and C.E. Ryan (Columbia, SC: Univ. of South Carolina, 1974), p. 508.
3. D.J Larkin, P.G. Neudek, J.A. Powell and L.G. Matus, Appl. Phys. Lett. 65, 1659 (1994).10.1063/1.112947 ↗
4. D.J. Larkin, S.G. Sridhara, R.P. Devaty and W.J. Choyke, J. Electron. Mater. 24, 289 (1995).10.1007/BF02659689 ↗
5. A.A. Burk, and L.B. Rowland.Appl. Phys. Lett. 68, 382 (1996).10.1063/1.116692 ↗
6. N. Nordell, A. Schöner and S.G. Andersson, J. Electrochem. Soc. 143, 2910 (1996).10.1149/1.1837126 ↗
7. Epigress AB, Lund, Sweden.
8. N. Nordell, P. Ojala, W.H. van Berlo, G. Landgren and M.K Linnarsson, J. Appl. Phys. 67, 778 (1990).10.1063/1.345731 ↗
9. G. Pensl, V.V. Afanasev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maier and W. J. Choyke, Inst. Phys. Conf. Ser. 142 (Bristol: IOP, 1996), p. 275.
10. A.O. Konstantinov, Sov. Phys. Semicond. 26, 151 (1992).