Effects of Bi2Se3 Nanoparticle Inclusions on the Microstructure and Thermoelectric Properties of Bi2Te3-Based Nanocomposites
Source abstract
Abstract
A series of thermoelectric nanocomposite samples were prepared by integrating Bi2Se3 nanoparticles into a bulk Bi2Te3 matrix. Primarily, spherical Bi2Se3 nanoparticles with diameter of ∼30 nm were synthesized by combining bismuth acetate with elemental Te in oleic acid solution. Bi2Te3-based nanocomposite samples were prepared by consolidating the appropriate quantity of Bi2Se3 nanoparticles with the starting elements (Bi and Te) using typical solid-state synthetic reactions. The microstructure and composition of the Bi2Te3-based nanocomposites, as well as the effects of the Bi2Se3 nanoparticles on their thermoelectric properties, are investigated. Transmission electron microscopy observation of the Bi2Te3-based nanocomposites reveals two types of interface between the constituent materials, i.e., coherent and incoherent, depending on the Bi2Se3 concentration. The Bi2Se3 nanoparticles in the Bi2Te3 matrix act as scattering centers for a wider range of phonon frequencies, thereby reducing the thermal conductivity. As a result, the maximum ZT value of 0.75 is obtained for the Bi2Te3 nanocomposite with 10 wt.% Bi2Se3 nanoparticles at room temperature. It is clear that the reduction in the thermal conductivity plays a central role in the enhancement of the ZT value.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Advanced Thermodynamics and Statistical Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
Show source-provided references
1. L.E. Bell, Science 321, 1457 (2008).10.1126/science.1158899 ↗
2. M.G. Kanatzidis, Chem. Mater. 22, 648 (2010).10.1021/cm902195j ↗
3. G.J. Snyder and E.S. Toberer, Nat. Mater. 7, 105 (2008).10.1038/nmat2090 ↗
4. A. Minnich and G. Chen, Appl. Phys. Lett. 91, 073105 (2007).10.1063/1.2771040 ↗
5. T.M. Tritt, ed., Semiconductor and Semimetals, vol. 71 (San Diego: Academic, 2001).
6. R.G. Yang and G. Chen, Phys. Rev. B 69, 195316 (2004).10.1103/PhysRevB.69.195316 ↗
7. D.J. Bergman and L.G. Fel, J. Appl. Phys. 85, 8205 (1999).10.1063/1.370660 ↗
8. K.F. Hsu, S. Loo, F. Guo, W. Chen, J.S. Dyck, C. Uher, T. Hogan, E.K. Polychroniadis, and M.G. Kanatzidis, Science 303, 818 (2004).10.1126/science.1092963 ↗
9. X.B. Zhao, X.H. Ji, Y.H. Zhang, T.J. Zhy, J.P. Tu, and X.B. Zhang, Appl. Phys. Lett. 86, 062111 (2005).10.1063/1.1863440 ↗
10. S. Ganguly, C. Zhou, D. Morelli, J. Sakamoto, C. Uher, and S.L. Brock, J. Solid State Chem. 184, 3195 (2011).10.1016/j.jssc.2011.09.031 ↗
11. X. Shi, L. Chen, J. Yang, and G.P. Meisner, Appl. Phys. Lett. 84, 2301 (2004).10.1063/1.1687997 ↗
12. C.J. Vineis, A. Shakouri, A. Majumdar, and M.G. Kanatzidis, Adv. Mater. 22, 3970 (2010).10.1002/adma.201000839 ↗
13. F.J. DiSalvo, Science 285, 703 (1999).10.1126/science.285.5428.703 ↗
14. Y. Ma, Q. Hao, B. Poudel, Y. Lan, B. Yu, D. Wang, G. Chen, and Z. Ren, Nano Lett. 8, 2580 (2008).10.1021/nl8009928 ↗
15. H.J. Kim, K.J. Lee, S.-J. Kim, and M.-K. Han, Bull. Korean Chem. Soc. 31, 1123 (2010).10.1007/s11814-010-0210-y ↗
16. W. McClune, Powder Diffraction File (Swarthmore, PA: JCPDS International Center for Diffraction Data, 1997).
17. L.D. Hicks and M.S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).10.1103/PhysRevB.47.12727 ↗