GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements
Source abstract
Abstract
We obtained the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current–voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verify the model. The carrier concentration was bounded by 6 × 1017 cm−3 and 1.3 × 1018 cm−3, and the mobility was between 300 cm2 V−1 s−1 and 600 cm2 V−1 s−1.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design
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References (39)
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