DataVXJournal of Electronic MaterialsPaper
journal article·2009-10

A Numerical Simulation of Nanostructure Formation Utilizing Electromigration

Kazuhiko Sasagawa, Shota Fukushi, Yuxin Sun, Masumi Saka

Journal of Electronic Materials· Volume 38· Issue 10
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Source abstract

Abstract

A numerical method to simulate nanostructure formation due to electromigration in passivated Al specimens is developed based on the governing parameter for electromigration damage, \( {\hbox{AFD}}\ast\rm gen. \) The nanostructure formation is influenced by conditions such as the current density and substrate temperature. The results of the simulations are verified through experiments, and good agreement between the simulations and experiments is found for changes in nanostructure volume. The simulation is expected to be useful for identifying effective conditions for nanostructure formation.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

Nanomaterials

OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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